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HUF76107P3 Datasheet(数据表) 1 Page - Fairchild Semiconductor |
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HUF76107P3 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
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1 page 
©2003 Fairchild Semiconductor Corporation HUF76107P3 Rev. B1 HUF76107P3 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA76107. Features • Logic Level Gate Drive • 20A, 30V • Ultra Low On-Resistance, rDS(ON) = 0.052Ω • Temperature Compensating PSPICE® Model • Temperature Compensating SABER© Model • Thermal Impedance SPICE Model • Thermal Impedance SABER Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol Packaging Ordering Information PART NUMBER PACKAGE BRAND HUF76107P3 TO-220AB 76107P D G S JEDEC TO-220AB DRAIN SOURCE GATE DRAIN (FLANGE) Data Sheet January 2003 |
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