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HUF76107P3 Datasheet(数据表) 5 Page - Fairchild Semiconductor |
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HUF76107P3 Datasheet(HTML) 5 Page - Fairchild Semiconductor |
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5 page 
©2003 Fairchild Semiconductor Corporation HUF76107P3 Rev. B1 FIGURE 7. TRANSFER CHARACTERISTICS FIGURE 8. SATURATION CHARACTERISTICS FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT FIGURE 10. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE Typical Performance Curves Unless otherwise specified (Continued) 0 12 6 0 10 20 25 VGS, GATE TO SOURCE VOLTAGE (V) 150oC -40oC 25oC PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX VDD = 15V 30 4 5 3 15 5 VGS = 3.5V VGS = 4V 0 1 34 56 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = 5V VGS = 10V VGS = 3V VGS = 4.5V 2 0 10 20 25 30 15 5 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 50 60 70 90 30 4 VGS, GATE TO SOURCE VOLTAGE (V) 26 10 8 ID = 20A ID = 12A ID = 5A 40 80 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 0.50 0.75 1.00 1.25 1.75 -60 0 60 120 TJ, JUNCTION TEMPERATURE ( oC) 180 1.50 2.00 120 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX VGS = 10V, ID = 20A -60 0 60 120 0.6 0.8 0.9 1.1 1.2 TJ, JUNCTION TEMPERATURE ( oC) VGS = VDS, ID = 250µA 180 1.0 0.7 0.6 1.15 1.10 1.00 0.95 0.90 -60 0 60 120 TJ, JUNCTION TEMPERATURE ( oC) ID = 250µA 180 1.05 HUF76107P3 |
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