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HUF76107D3 Datasheet(数据表) 2 Page - Fairchild Semiconductor |
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HUF76107D3 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 page 
©2003 Fairchild Semiconductor Corporation HUF76107D3, HUF76107D3S Rev. B1 Absolute Maximum Ratings TC = 25 oC, Unless Otherwise Specified UNITS Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS 30 V Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR 30 V Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 V Drain Current Continuous (TC = 25 oC, V GS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Continuous (TC = 100 oC, V GS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Continuous (TC = 100 oC, V GS = 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 20 10.5 10 Figure 4 A A A Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Figure 6 Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 0.30 W W/oC Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25 oC to 150oC. Electrical Specifications TA = 25 oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V (Figure 12) 30 - - V Zero Gate Voltage Drain Current IDSS VDS = 25V, VGS = 0V - - 1 µA VDS = 25V, VGS = 0V, TC = 150 oC- - 250 µA Gate to Source Leakage Current IGSS VGS = ±20V - - ±100 nA ON STATE SPECIFICATIONS Gate to Source Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA (Figure 11) 1 - 3 V Drain to Source On Resistance rDS(ON) ID = 20A, VGS = 10V (Figure 9, 10) - 0.042 0.052 Ω ID = 10.5A, VGS = 5V (Figure 9) - 0.058 0.080 Ω ID = 10A, VGS = 4.5V (Figure 9) - 0.065 0.085 Ω THERMAL SPECIFICATIONS Thermal Resistance Junction to Case RθJC (Figure 3) - - 3.3 oC/W Thermal Resistance Junction to Ambient RθJA TO-251, TO-252 - - 100 oC/W SWITCHING SPECIFICATIONS (VGS = 4.5V) Turn-On Time tON VDD = 15V, ID ≅ 10A, RL = 1.50Ω, VGS = 4.5V, RGS = 33Ω (Figure 15) -- 120 ns Turn-On Delay Time td(ON) -14 - ns Rise Time tr -66 - ns Turn-Off Delay Time td(OFF) -16 - ns Fall Time tf -22 - ns Turn-Off Time tOFF -- 57 ns HUF76107D3, HUF76107D3S |
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