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HUF76107D3 Datasheet(数据表) 3 Page - Fairchild Semiconductor |
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HUF76107D3 Datasheet(HTML) 3 Page - Fairchild Semiconductor |
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3 page 
©2003 Fairchild Semiconductor Corporation HUF76107D3, HUF76107D3S Rev. B1 SWITCHING SPECIFICATIONS (VGS = 10V) Turn-On Time tON VDD = 15V, ID ≅ 20A, RL =0.75Ω, VGS = 10V, RGS = 33Ω (Figures 16) -- 75 ns Turn-On Delay Time td(ON) -18 - ns Rise Time tr -30 - ns Turn-Off Delay Time td(OFF) -62 - ns Fall Time tf -20 - ns Turn-Off Time tOFF -- 125 ns GATE CHARGE SPECIFICATIONS Total Gate Charge Qg(TOT) VGS = 0V to 10V VDD = 15V,ID ≅ 10.5A, RL = 1.43Ω Ig(REF) = 1.0mA (Figure 14) - 8.6 10.3 nC Gate Charge at 5V Qg(5) VGS = 0V to 5V - 4.7 5.7 nC Threshold Gate Charge Qg(TH) VGS = 0V to 1V - 0.35 0.42 nC Gate to Source Gate Charge Qgs -1.00 - nC Gate to Drain “Miller” Charge Qgd -2.40 - nC CAPACITANCE SPECIFICATIONS Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz (Figure 13) -315 - pF Output Capacitance COSS -170 - pF Reverse Transfer Capacitance CRSS -30 - pF Electrical Specifications TA = 25 oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage VSD ISD = 10.5A - - 1.25 V Reverse Recovery Time trr ISD = 10.5A, dISD/dt = 100A/µs- - 39 ns Reverse Recovered Charge QRR ISD = 10.5A, dISD/dt = 100A/µs- - 49 nC Typical Performance Curves Unless otherwise specified FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE TA, AMBIENT TEMPERATURE ( oC) 0 0 25 50 75 100 150 0.2 0.4 0.6 0.8 1.0 1.2 125 10 0 25 50 75 100 125 TC, CASE TEMPERATURE ( oC) 25 150 5 20 VGS = 4.5V VGS = 10V 15 HUF76107D3, HUF76107D3S |
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