2SD1163 datasheet(2/2 Pages) THINKISEMI

部件名	2SD1163

功能描述	NPN Silicon Epitaxial Power Transistor

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制造商	THINKISEMI [Thinki Semiconductor Co., Ltd.]

网页	http://www.thinkisemi.com

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2 / 2 page

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

2SD1163

120

V(BR)CEO

Collector-emitter

breakdown voltage

2SD1163A

IC=10mA ;RBE=∞

150

V

V(BR)EBO

Emitter-base breakdown voltage

IE=10mA ;IC=0

6

V

2SD1163

2.0

VCEsat

Collector-emitter

saturation voltage

2SD1163A

IC=5A, IB=0.5A

1.0

V

VBEsat

Base-emitter saturation voltage

IC=5A, IB=0.5A

1.2

V

2SD1163

VCB=300V;IE=0

5

mA

ICBO

Collector

cut-offcurrent

2SD1163A

VCB=350V;IE=0

5

mA

hFE

DC current gain

IC=5A ; VCE=5V

25

Switching times

tf

Fall time

ICM=3.5A;IB1 =0.45A

0.5

μs

®

2SD1163/2SD1163A

http://www.thinkisemi.com/

Page 2/2

类似零件编号 - 2SD1163

制造商	部件名	数据表	功能描述
Hitachi Semiconductor	2SD1163	32Kb / 6P	Silicon NPN Triple Diffused
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类似说明 - 2SD1163

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