BCP56-10 datasheet(9/15 Pages) NXP

部件名	BCP56-10

功能描述	80 V, 1 A NPN medium power transistors

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制造商	NXP [NXP Semiconductors]

网页	http://www.nxp.com

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9 / 15 page

BC639_BCP56_BCX56_8

Product data sheet

Rev. 08 — 22 June 2007

9 of 15

NXP Semiconductors

BC639; BCP56; BCX56

80 V, 1 A NPN medium power transistors

7.

Characteristics

[1]

Pulse test: tp ≤ 300 µs; δ = 0.02.

FR4 PCB, mounting pad for collector 6 cm2

Fig 9.

Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89;

typical values

006aaa816

10

1

102

103

Zth(j-a)

(K/W)

10−1

10−5

10

10−2

10−4

102

10−1

tp (s)

10−3

103

1

duty cycle =

0.01

0

0.02

0.05

0.1

0.2

0.33

0.5

0.75

1.0

Table 8.

Characteristics

Tamb =25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

ICBO

collector-base cut-off

current

VCB =30V; IE = 0 A

-

100

nA

VCB =30V; IE =0A;

Tj = 150 °C

--10

µA

IEBO

emitter-base cut-off

current

VEB =5V; IC = 0 A

-

100

nA

hFE

DC current gain

VCE =2V

IC = 5 mA

63

-

IC = 150 mA

63

-

250

IC = 500 mA

[1] 40

-

DC current gain

VCE =2V

hFE selection -10

IC = 150 mA

63

-

160

hFE selection -16

IC = 150 mA

100

-

250

VCEsat

collector-emitter

saturation voltage

IC = 500 mA; IB =50mA

[1] -

-

500

mV

VBE

base-emitter voltage

VCE =2V; IC = 500 mA

[1] --1

V

Cc

collector capacitance

VCB =10V; IE =ie =0A;

f=1MHz

-6

-pF

fT

transition frequency

VCE =5V; IC =50mA;

f = 100 MHz

100

180

-

MHz

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