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BTB12-xxxBWRG 数据表(PDF) 4 Page - STMicroelectronics |
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BTB12-xxxBWRG 数据表(HTML) 4 Page - STMicroelectronics |
4 / 12 page Characteristics BTA12, BTB12, T12xx 4/12 Figure 1. Maximum power dissipation versus RMS on-state current (full cycle) Figure 2. RMS on-state current versus case temperature (full cycle) P(W) I (A) T(RMS) 16 14 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 9 10 11 12 I (A) T(RMS) 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 25 50 75 100 125 T (°C) C BTA BTB / T12 Figure 3. RMS on-state current versus ambient temperature (printed circuit board FR4, copper thickness: 35µm) (full cycle) Figure 4. Relative variation of thermal impedance versus pulse duration 0 25 50 75 100 125 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 I (A) T(RMS) T (°C) C DPAK (S=1cm ) 2 2 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 1E-2 1E-1 1E+0 K=[Z /R th th] t (s) p Zth(j-c) Zth(j-a) Figure 5. On-state characteristics (maximum values) Figure 6. Surge peak on-state current versus number of cycles 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 1 10 100 I (A) TM V (V) TM T max. V = 0.85V R = 35 m j to d Ω T= j T max. j T = 25°C j . 1 10 100 1000 0 10 20 30 40 50 60 70 80 90 100 110 120 130 I (A) TSM Number of cycles t=20ms One cycle Non repetitive T initial=25°C j Repetitive T =90°C C |
类似零件编号 - BTB12-xxxBWRG |
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类似说明 - BTB12-xxxBWRG |
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