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N25Q032A13ESC40F Datasheet(数据表) 85 Page - Micron Technology

部件型号  N25Q032A13ESC40F
说明  32-Mbit 3 V, multiple I/O, 4-Kbyte subsector erase, XiP enabled, serial flash memory with 108 MHz SPI bus interface
下载  153 Pages
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制造商  MICRON [Micron Technology]
网页  http://www.micron.com
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N25Q032A13ESC40F Datasheet(HTML) 85 Page - Micron Technology

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N25Q032 - 3 V
Instructions
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Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2010 Micron Technology, Inc. All rights reserved.
9.1.32
Write Volatile Configuration Register
The Write Volatile Configuration register (WRVCR) instruction allows new values to be
written to the Volatile Configuration register. Before it can be accepted, a write enable
(WREN) instruction must have been executed. After the write enable (WREN) instruction
has been decoded and executed, the device sets the write enable latch (WEL).
The Write Volatile Configuration register (WRVCR) instruction is entered by driving Chip
Select (S) Low, followed by the instruction code and the data byte on serial data input
(DQ0).
Chip Select (S) must be driven High after the eighth bit of the data byte has been latched in.
If not, the Write Volatile Configuration register (WRVCR) instruction is not executed.
When the new data are latched, the write enable latch (WEL) is reset.
The Write Volatile Configuration register (WRVCR) instruction allows the user to change the
values of all the Volatile Configuration Register bits, described in Table 5.: Volatile
Configuration Register.
The Write Volatile Configuration Register impacts the memory behavior right after the
instruction is received by the device.
Figure 40.
Write Volatile Configuration Register instruction sequence
9.1.33
Read Volatile Enhanced Configuration Register
The Read Volatile Enhanced Configuration Register (RDVECR) instruction allows the
Volatile Configuration Register to be read.
C
DQ0
S
DQ1
2
1
3
456789
10 11 12 13 14 15
High Impedance
Instruction
Volatile Configuration
Register In
0
765432
0
1
MSB




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