BD159STU datasheet(1/4 Pages) FAIRCHILD

部件名	BD159STU

功能描述	For T.V Radio Audio Output Amplifiers

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制造商	FAIRCHILD [Fairchild Semiconductor]

网页	http://www.fairchildsemi.com

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Rev. A1, June 2001

NPN Epitxial Silicon Transistor

Absolute Maximum Ratings T

C=25°C unless otherwise noted

Electrical Characteristics T

C=25°C unless otherwise noted

* Pulse Test: PW=300

µs, duty Cycle=1.5% Pulsed

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

: BD157

: BD158

: BD159

275

325

375

V

VCEO

Collector-Emitter Voltage

: BD157

: BD158

: BD159

250

300

350

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current (DC)

0.5

A

ICP

*Collector Current (Pulse)

1.0

A

IB

Base Current

0.25

A

PC

Collector Dissipation (TC=25°C)

20

W

TJ

Junction Temperature

50

°C

TSTG

Storage Temperature

- 65 ~ 150

°C

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

BVCEO

*Collector-Emitter Breakdown Voltage

: BD157

: BD158

: BD159

IC = 1mA, IB = 0

250

300

350

V

ICBO

Collector Cut-off Current

: BD157

: BD158

: BD159

VCB = 275V, IE = 0

VCB = 325V, IE = 0

VCB = 375V, IE = 0

100

µA

IEBO

Emitter Cut-off Current

VEB = 5V, IC = 0

100

µA

hFE

* DC Current Gain

VCE = 10V, IC = 50mA

30

240

BD157/158/159

Low Power Fast Switching Output Stages

• For T.V Radio Audio Output Amplifiers

1

TO-126

1. Emitter

2.Collector

3.Base

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