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IRF7319TRPBF Datasheet(数据表) 2 Page - International Rectifier

部件型号  IRF7319TRPBF
说明  GenarafionV Technology
下载  10 Pages
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制造商  IRF [International Rectifier]
网页  http://www.irf.com
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 2 page
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IRF7319PbF
… Surface mounted on FR-4 board, t ≤ 10sec.
Parameter
Min. Typ. Max. Units
Conditions
N-Ch 30
—
—
VGS = 0V, ID = 250µA
P-Ch -30
—
—
VGS = 0V, ID = -250µA
N-Ch — 0.022 —
Reference to 25°C, ID = 1mA
P-Ch — 0.022 —
Reference to 25°C, ID = -1mA
— 0.023 0.029
VGS = 10V, ID = 5.8A „
— 0.032 0.046
VGS = 4.5V, ID = 4.7A „
— 0.042 0.058
VGS = -10V, ID = -4.9A „
— 0.076 0.098
VGS = -4.5V, ID = -3.6A „
N-Ch 1.0
—
—
VDS = VGS, ID = 250µA
P-Ch -1.0 —
—
VDS = VGS, ID = -250µA
N-Ch —
14
—
VDS = 15V, ID = 5.8A „
P-Ch —
7.7
—
VDS = -15V, ID = -4.9A
„
N-Ch —
—
1.0
VDS = 24V, VGS = 0V
P-Ch —
— -1.0
VDS = -24V, VGS = 0V
N-Ch —
—
25VDS = 24V, VGS = 0V, TJ = 55°C
P-Ch —
—
-25VDS = -24V, VGS = 0V, TJ = 55°C
IGSS
Gate-to-Source Forward Leakage
N-P ––
— ±100
VGS = ±20V
N-Ch —
22
33
P-Ch —
23
34
N-Ch —
2.6 3.9
P-Ch —
3.8 5.7
N-Ch —
6.4 9.6
P-Ch —
5.9 8.9
N-Ch —
8.1
12
P-Ch —
13
19
N-Ch —
8.9
13
P-Ch —
13
20
N-Ch —
26
39
P-Ch —
34
51
N-Ch —
17
26
P-Ch —
32
48
N-Ch —
650
—
P-Ch —
710
—
N-Ch —
320
—
pF
P-Ch —
380
—
N-Ch —
130
—
P-Ch —
180
—
V(BR)DSS
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V
V/°C
V
S
µA
nC
ns
N-Channel
ID = 5.8A, VDS = 15V, VGS = 10V
„
P-Channel
ID = -4.9A, VDS = -15V, VGS = -10V
N-Channel
VDD = 15V, ID = 1.0A, RG = 6.0Ω,
RD = 15Ω
„
P-Channel
VDD = -15V, ID = -1.0A, RG = 6.0Ω,
RD = 15Ω
N-Channel
VGS = 0V, VDS = 25V, ƒ = 1.0MHz
P-Channel
VGS = 0V, VDS = -25V, ƒ = 1.0MHz
N-Ch
P-Ch
Parameter
Min. Typ. Max. Units
Conditions
N-Ch —
—
2.5
P-Ch —
— -2.5
N-Ch —
—
30
P-Ch —
—
-30
N-Ch — 0.78 1.0
TJ = 25°C, IS = 1.7A, VGS = 0V ƒ
P-Ch — -0.78 -1.0
TJ = 25°C, IS = -1.7A, VGS = 0V ƒ
N-Ch —
4568
P-Ch —
44
66
N-Ch —
58
87
P-Ch —
42
63
Source-Drain Ratings and Characteristics
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current (Body Diode) 
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
A
V
ns
nC
N-Channel
TJ = 25°C, IF =1.7A, di/dt = 100A/µs
P-Channel
„
TJ = 25°C, IF = -1.7A, di/dt = 100A/µs
‚ N-Channel ISD ≤ 4.0A, di/dt ≤ 74A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
P-Channel ISD ≤ -2.8A, di/dt ≤ 150A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 22 )
Notes:
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
ƒ N-Channel Starting TJ = 25°C, L = 10mH RG = 25Ω, IAS = 4.0A. (See Figure 12)
P-Channel Starting TJ = 25°C, L = 35mH RG = 25Ω, IAS = -2.8A.
nA




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