1N4531 / 1N4148 / 1N4150 / 1N4448

Diodes

Switching diode

1N4531 / 1N4148 / 1N4150 / 1N4448

∗This product is available only outside of Japan.

Application

High-speed switching

Features

1) Glass sealed envelope. (MSD, GSD)

2) High speed.

3) High reliability.

Construction

Silicon epitaxial planar

External dimensions (Units : mm)

φ 0.5±0.1

C

29

±1

29

±1

CATHODE BAND (BLACK)

3.8

±0.2

A

φ 1.8±0.2

Type No.

ROHM : GSD

EIAJ :

−

JEDEC : DO-35

φ 0.5±0.1

C

29

±1

29

±1

CATHODE BAND (BLACK)

2.7

±0.3

A

φ 1.8±0.2

Type No.

ROHM : MSD

EIAJ :

−

JEDEC : DO-34

1N4531

1N4148 / 1N4150 / 1N4448

Absolute maximum ratings (Ta = 25

°C)

Type

1N4148

100

−65~+200

−65~+200

(V)

75

(V)

450

(mA)

150

(mA)

200

(mA)

2

(A)

1

µs

500

(mW)

P

200

1N4531

100

−65~+200

−65~+200

75

450

150

200

2

500

200

1N4150

50

−65~+200

−65~+200

50

600

200

250

4

500

200

1N4448

100

−65~+200

−65~+200

75

450

150

200

2

500

200

(

°C)

Tj

(

°C)

Topr

(

°C)

Tstg

Electrical characteristics (Ta = 25

°C)

Type

0.1mA

1.0

0.66

0.62

0.74

0.76

0.86

0.82

0.92

1.0

0.87

1.0

0.54

0.62

0.72

@

0.25mA

@

1mA

@

2mA

@

5mA

@

10mA

@

20mA

@

30mA

@

50mA

@

100mA

@

200mA

@

250mA

@

5

µA

75

100

50.0

20

4

4

0.025

5.0

20

75

−

50

0.1

50

100.0

50

2.5

4

−

100

50.0

20

4

4

@

100

µA

@

@150

°C

@25

°C

µA) Max.

BV (V) Min.

=10mA

f

=1MHz

=0

=100Ω

=6V

1N4148

1.0

75

100

50.0

20

4

4

0.025

5.0

20

75

1N4531

1N4150

1N4448

0.025

5.0

20

75