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FQP9N08 数据表(PDF) 3 Page - Fairchild Semiconductor |
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FQP9N08 数据表(HTML) 3 Page - Fairchild Semiconductor |
3 / 8 page Rev. A2, December 2000 ©2000 Fairchild Semiconductor International 01 2345 67 0 2 4 6 8 10 12 V DS = 40V V DS = 64V ※ Note : I D = 9.3A Q G, Total Gate Charge [nC] 10 -1 10 0 10 1 0 100 200 300 400 500 C iss = Cgs + Cgd (Cds = shorted) C oss = Cds + Cgd C rss = Cgd ※ Notes : 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss V DS, Drain-Source Voltage [V] 10 -1 10 0 10 1 10 0 10 1 V GS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V ※ Notes : 1. 250μs Pulse Test 2. T C = 25 ℃ V DS, Drain-Source Voltage [V] Typical Characteristics Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 -1 10 0 10 1 25℃ 175℃ ※ Notes : 1. V GS = 0V 2. 250μs Pulse Test V SD , Source-Drain Voltage [V] 0 4 8 12 16 20 24 0.0 0.2 0.4 0.6 0.8 1.0 ※ Note : T J = 25 ℃ V GS = 20V V GS = 10V I D , Drain Current [A] 24 6 8 10 10 -1 10 0 10 1 ※ Notes : 1. V DS = 30V 2. 250μs Pulse Test -55℃ 175℃ 25℃ V GS , Gate-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics |
类似零件编号 - FQP9N08 |
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类似说明 - FQP9N08 |
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