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STP32N65M5 数据表(PDF) 5 Page - STMicroelectronics |
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STP32N65M5 数据表(HTML) 5 Page - STMicroelectronics |
5 / 22 page STB/F/I/P/W32N65M5 Electrical characteristics Doc ID 15316 Rev 4 5/22 Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(off) tr tc tf Turn-off delay time Rise time Cross time Fall time VDD = 400 V, ID = 15 A, RG = 4.7 Ω, VGS = 10 V (see Figure 21) - 53 12 29 16 - ns ns ns ns Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) - 24 96 A A VSD (2) 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 24 A, VGS = 0 - 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 24 A, di/dt = 100 A/µs VDD = 60 V (see Figure 21) - 375 6 33 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 24 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C (see Figure 21) - 440 8 36 ns µC A |
类似零件编号 - STP32N65M5 |
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类似说明 - STP32N65M5 |
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