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N0439N 数据表(PDF) 1 Page - Renesas Technology Corp |
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N0439N 数据表(HTML) 1 Page - Renesas Technology Corp |
1 / 7 page R07DS1065EJ0100 Rev.1.00 Page 1 of 6 Jun 13, 2013 Data Sheet N0439N N-channel MOSFET 40 V, 90 A, 3.3 m Ω Description This product is N-channel MOS Field Effect Transistors designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 3.3 mΩ MAX. ( VGS = 10 V, ID = 45 A ) • Low Ciss : Ciss = 3900 pF TYP. ( VDS = 25 V ) Ordering Information Part No. LEAD PLATING PACKING Package N0439N-S19-AY*1 Pure Sn (Tin) Tube 50 p/tube TO-220 1.9g TYP. Note: *1. Pb-free ( This product does not contain Pb in the external electrode. ) Absolute Maximum Ratings (TA = 25°C) Item Symbol Ratings Unit Drain to Source Voltage (VGS = 0 V) VDSS 40 V Gate to Source Voltage (VDS = 0 V) VGSS ± 20 V Drain Current (DC) (TC = 25 °C) ID(DC) ± 90 A Drain Current (pulse) *1 ID(pulse) ± 360 A Total Power Dissipation (TC = 25 °C) PT1 147 W Total Power Dissipation (TA = 25 °C) PT2 1.8 W Channel Temperature Tch 175 °C Storage Temperature Tstg -55 to 175 °C Repetitive Avalanche Current *2 IAR 37 A Repetitive Avalanche Energy *2 EAR 136 mJ Notes: ∗1. TC=25℃、Pw ≤ 10 μs, Duty Cycle ≤ 1% ∗2. RG = 25Ω, VGS = 20 0V Thermal Resistance Channel to Case Thermal Resistance Rth(ch-C) 1.02 °C/W Channel to Ambient Thermal Resistance Rth(ch-A) 83.3 °C/W R07DS1065EJ0100 Rev.1.00 Jun 13, 2013 TO-220 |
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