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FQD30N06L 数据表(PDF) 3 Page - Fairchild Semiconductor |
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FQD30N06L 数据表(HTML) 3 Page - Fairchild Semiconductor |
3 / 9 page ©2001 Fairchild Semiconductor Corporation Rev. A1. May 2001 0 20406080 100 120 0 20 40 60 80 V GS = 10V V GS = 5V ※ Note : T J = 25 ℃ I D, Drain Current [A] 02468 10 10 0 10 1 150℃ 25℃ -55℃ ※ Notes : 1. V DS = 25V 2. 250μ s Pulse Test V GS, Gate-Source Voltage [V] 10 -1 10 0 10 1 10 0 10 1 V GS Top : 10.0 V 8.0 V 6.0 V 5.0 V 4.5 V 4.0 V 3.5 V Bottom : 3.0 V ※ Notes : 1. 250μ s Pulse Test 2. T C = 25 ℃ V DS, Drain-Source Voltage [V] 0 5 10 15 20 25 30 0 2 4 6 8 10 12 V DS = 30V V DS = 48V ※ Note : I D = 32A Q G, Total Gate Charge [nC] 10 -1 10 0 10 1 0 500 1000 1500 2000 C iss = Cgs + Cgd (Cds = shorted) C oss = Cds + Cgd C rss = Cgd ※ Notes : 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss V DS, Drain-Source Voltage [V] 0.4 0.6 0.8 1.0 1.2 1.4 10 0 10 1 150℃ ※ Notes : 1. V GS = 0V 2. 250μ s Pulse Test 25℃ V SD, Source-Drain voltage [V] Typical Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Figure 6. Gate Charge Characteristics Figure 5. Capacitance Characteristics |
类似零件编号 - FQD30N06L |
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类似说明 - FQD30N06L |
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