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FQD2N50B 数据表(PDF) 3 Page - Fairchild Semiconductor |
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FQD2N50B 数据表(HTML) 3 Page - Fairchild Semiconductor |
3 / 9 page ©2000 Fairchild Semiconductor International Rev. A, May 2000 01 2345 67 0 2 4 6 8 10 12 V DS = 250V V DS = 100V V DS = 400V ※ Note : I D = 2.1 A Q G, Total Gate Charge [nC] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 -1 10 0 25℃ 150℃ ※ Notes : 1. V GS = 0V 2. 250μs Pulse Test V SD , Source-Drain Voltage [V] 2468 10 10 -1 10 0 ※ Notes : 1. V DS = 50V 2. 250μs Pulse Test -55℃ 150℃ 25℃ V GS , Gate-Source Voltage [V] 10 -1 10 0 10 1 10 -2 10 -1 10 0 ※ Notes : 1. 250μs Pulse Test 2. T C = 25 ℃ V GS Top : 15 V 10 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V V DS , Drain-Source Voltage [V] 10 -1 10 0 10 1 0 50 100 150 200 250 300 350 C iss = Cgs + Cgd (Cds = shorted) C oss = Cds + Cgd C rss = Cgd ※ Notes : 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss V DS, Drain-Source Voltage [V] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 3 6 9 12 15 18 ※ Note : T J = 25 ℃ V GS = 20V V GS = 10V I D , Drain Current [A] Typical Characteristics Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Figure 2. Transfer Characteristics Figure 1. On-Region Characteristics |
类似零件编号 - FQD2N50B |
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类似说明 - FQD2N50B |
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