May 2001

©2001 Fairchild Semiconductor Corporation

Rev. A1. May 2001

FQD1N80 / FQU1N80

800V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switch mode power supply.

Features

• Low gate charge ( typical 5.5nC)

• Low Crss ( typical 2.7pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Thermal Characteristics

Symbol

Parameter

FQD1N80 / FQU1N80

Units

Drain-Source Voltage

800

V

Drain Current

1.0

A

0.63

A

Drain Current

- Pulsed

(Note 1)

4.0

A

Gate-Source Voltage

± 30

V

Single Pulsed Avalanche Energy

(Note 2)

90

mJ

Avalanche Current

(Note 1)

1.0

A

Repetitive Avalanche Energy

(Note 1)

4.5

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

4.0

V/ns

2.5

W

45

W

- Derate above 25°C

0.36

W/°C

Operating and Storage Temperature Range

-55 to +150

°C

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300

°C

Symbol

Parameter

Typ

Max

Units

Thermal Resistance, Junction-to-Case

--

2.78

°C/W

Thermal Resistance, Junction-to-Ambient *

--

50

°C/W

Thermal Resistance, Junction-to-Ambient

--

110

°C/W

* When mounted on the minimum pad size recommended (PCB Mount)

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S

D

G

I-PAK

FQU Series

D-PAK

FQD Series

G

S

D

G

S

D