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AD8132ARM 数据表(PDF) 9 Page - Analog Devices |
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AD8132ARM 数据表(HTML) 9 Page - Analog Devices |
9 / 32 page AD8132 Rev. I | Page 9 of 32 ABSOLUTE MAXIMUM RATINGS Table 7. Parameter Rating Supply Voltage ±5.5 V VOCM ±VS Internal Power Dissipation 250 mW Operating Temperature Range −40°C to +125°C Storage Temperature Range −65°C to +150°C Lead Temperature (Soldering 10 sec) 300°C Junction Temperature 150°C The power dissipated in the package (PD) is the sum of the quiescent power dissipation and the power dissipated in the package due to the load drive for all outputs. The quiescent power is the voltage between the supply pins (VS) times the quiescent current (IS). The load current consists of the differential and common-mode currents flowing to the load, as well as currents flowing through the external feedback networks and the internal common-mode feedback loop. The internal resistor tap used in the common-mode feedback loop places a 1 kΩ differential load on the output. Consider rms voltages and currents when dealing with ac signals. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Airflow reduces θJA. In addition, more metal directly in contact with the package leads from metal traces through holes, ground, and power planes reduces the θJA. Figure 3 shows the maximum safe power dissipation in the package vs. the ambient temperature for the 8-lead SOIC (θJA = 121°C/W) and 8-lead MSOP (θJA = 142°C/W) packages on a JEDEC standard 4-layer board. θJA values are approximations. THERMAL RESISTANCE θJA is specified for the worst-case conditions, that is, θJA is specified for the device soldered in a circuit board in still air. AMBIENT TEMPERATURE (°C) 1.75 1.50 1.00 1.25 0.50 0.25 0.75 0 –40 –30 –20 –10 0 10 20 30 40 50 60 70 80 90 100 110 120 SOIC MSOP Table 8. Package Type θJA Unit 8-Lead SOIC, 4-Layer 121 °C/W 8-Lead MSOP, 4-Layer 142 °C/W MAXIMUM POWER DISSIPATION The maximum safe power dissipation in the AD8132 packages is limited by the associated rise in junction temperature (TJ) on the die. At approximately 150°C, the glass transition temperature, the plastic changes its properties. Even temporarily exceeding this temperature limit can change the stresses that the package exerts on the die, permanently shifting the parametric performance of the AD8132. Exceeding a junction temperature of 150°C for an extended period can result in changes in the silicon devices, potentially causing failure. Figure 3. Maximum Power Dissipation vs. Ambient Temperature ESD CAUTION |
类似零件编号 - AD8132ARM |
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类似说明 - AD8132ARM |
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