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STU3N45K3 数据表(PDF) 5 Page - STATEK CORPORATION |
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STU3N45K3 数据表(HTML) 5 Page - STATEK CORPORATION |
5 / 14 page DocID17206 Rev 3 5/14 STU3N45K3 Electrical characteristics 14 The built-in back-to-back Zener diodes have been specifically designed to enhance not only the device’s ESD capability, but also to make them capable of safely absorbing any voltage transients that may occasionally be applied from gate to source. In this respect, the Zener voltage is appropriate to achieve efficient and cost-effective protection of device integrity. The integrated Zener diodes thus eliminate the need for external components. Table 6.Switching times Symbol Parameter Test conditions Min. Typ. Max Unit td(on) Turn-on delay time VDD = 225 V, ID = 0.9 A, RG = 4.7 Ω, VGS = 10 V (see Figure 15) -6.5 - ns tr Rise time - 5.4 - ns td(off) Turn-off-delay time - 17 - ns tf Fall time - 22 - ns Table 7.Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 0.6 A ISDM (1) 1. Pulse width limited by safe operating area. Source-drain current (pulsed) - 2.4 A VSD (2) 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%. Forward on voltage ISD = 0.6 A, VGS = 0 - 1.5 V trr Reverse recovery time ISD = 1.8 A, di/dt = 100 A/µs VDD = 60 V (see Figure 20) -175 ns Qrr Reverse recovery charge - 550 nC IRRM Reverse recovery current - 6 A trr Reverse recovery time ISD = 1.8 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C (see Figure 20) -185 ns Qrr Reverse recovery charge - 600 nC IRRM Reverse recovery current - 6.5 A Table 8.Gate-source Zener diode Symbol Parameter Test conditions Min Typ Max Unit V(BR)GSO Gate-source breakdown voltage IGS= ± 1 mA, ID=0 30 - - V |
类似零件编号 - STU3N45K3 |
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类似说明 - STU3N45K3 |
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