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STU3N45K3 数据表(PDF) 5 Page - STATEK CORPORATION

部件名 STU3N45K3
功能描述  N-channel 450 V - 3.3typ., 1.8 A Zener-protected SuperMESH3??Power MOSFET in a IPAK package
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制造商  STATEK [STATEK CORPORATION]
网页  http://www.statek.com
标志 STATEK - STATEK CORPORATION

STU3N45K3 数据表(HTML) 5 Page - STATEK CORPORATION

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DocID17206 Rev 3
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STU3N45K3
Electrical characteristics
14
The built-in back-to-back Zener diodes have been specifically designed to enhance not only
the device’s ESD capability, but also to make them capable of safely absorbing any voltage
transients that may occasionally be applied from gate to source. In this respect, the Zener
voltage is appropriate to achieve efficient and cost-effective protection of device integrity.
The integrated Zener diodes thus eliminate the need for external components.
Table 6.Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
td(on)
Turn-on delay time
VDD = 225 V, ID = 0.9 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 15)
-6.5
-
ns
tr
Rise time
-
5.4
-
ns
td(off)
Turn-off-delay time
-
17
-
ns
tf
Fall time
-
22
-
ns
Table 7.Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
ISD
Source-drain current
-
0.6
A
ISDM
(1)
1.
Pulse width limited by safe operating area.
Source-drain current (pulsed)
-
2.4
A
VSD
(2)
2.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Forward on voltage
ISD = 0.6 A, VGS = 0
-
1.5
V
trr
Reverse recovery time
ISD = 1.8 A, di/dt = 100 A/µs
VDD = 60 V (see Figure 20)
-175
ns
Qrr
Reverse recovery charge
-
550
nC
IRRM
Reverse recovery current
-
6
A
trr
Reverse recovery time
ISD = 1.8 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 20)
-185
ns
Qrr
Reverse recovery charge
-
600
nC
IRRM
Reverse recovery current
-
6.5
A
Table 8.Gate-source Zener diode
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
V(BR)GSO
Gate-source breakdown
voltage
IGS= ± 1 mA, ID=0
30
-
-
V


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