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STD3PK50Z 数据表(PDF) 3 Page - STMicroelectronics

部件名 STD3PK50Z
功能描述  P-channel 500 V, 3 廓 typ., 2.8 A Zener-protected SuperMESH??Power MOSFET in a DPAK package
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STD3PK50Z 数据表(HTML) 3 Page - STMicroelectronics

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STD3PK50Z
Electrical ratings
Doc ID 18280 Rev 2
3/15
1
Electrical ratings
Note:
For the P-channel Power MOSFETs actual polarity of voltages and current has to be
reversed.
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain source voltage
500
V
VGS
Gate- source voltage
± 30
V
ID
Drain current (continuous) at TC = 25 °C
2.8
A
ID
Drain current (continuous) at TC = 100 °C
1.8
A
IDM
(1)
1.
Pulse width limited by safe operating area.
Drain current (pulsed)
11
A
PTOT
Total dissipation at TC = 25 °C
85
W
IAR
Max current during repetitive or single pulse
avalanche (pulse width limited by Tjmax )
2.8
A
EAS
Single pulse avalanche energy
(starting TJ = 25 °C, ID=IAS, VDD= 50 V)
200
mJ
dv/dt (2)
2.
ISD ≤ 2.8 A, di/dt ≤ 200 A/µs, VPeak ≤V(BR)DSS
Peak diode recovery voltage slope
40
V/ns
ESD
Gate-source human body model
(R = 1,5 k, C = 100 pF)
3kV
Tj
Tstg
Operating junction temperature
Storage temperature
- 55 to 150
°C
Table 3.
Thermal data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case max
1.47
°C/W
Rthj-pcb
Thermal resistance junction-pcb max
50
°C/W


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