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STD3PK50Z 数据表(PDF) 3 Page - STMicroelectronics |
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STD3PK50Z 数据表(HTML) 3 Page - STMicroelectronics |
3 / 15 page STD3PK50Z Electrical ratings Doc ID 18280 Rev 2 3/15 1 Electrical ratings Note: For the P-channel Power MOSFETs actual polarity of voltages and current has to be reversed. Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain source voltage 500 V VGS Gate- source voltage ± 30 V ID Drain current (continuous) at TC = 25 °C 2.8 A ID Drain current (continuous) at TC = 100 °C 1.8 A IDM (1) 1. Pulse width limited by safe operating area. Drain current (pulsed) 11 A PTOT Total dissipation at TC = 25 °C 85 W IAR Max current during repetitive or single pulse avalanche (pulse width limited by Tjmax ) 2.8 A EAS Single pulse avalanche energy (starting TJ = 25 °C, ID=IAS, VDD= 50 V) 200 mJ dv/dt (2) 2. ISD ≤ 2.8 A, di/dt ≤ 200 A/µs, VPeak ≤V(BR)DSS Peak diode recovery voltage slope 40 V/ns ESD Gate-source human body model (R = 1,5 k, C = 100 pF) 3kV Tj Tstg Operating junction temperature Storage temperature - 55 to 150 °C Table 3. Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 1.47 °C/W Rthj-pcb Thermal resistance junction-pcb max 50 °C/W |
类似零件编号 - STD3PK50Z |
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类似说明 - STD3PK50Z |
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