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SI5447DC-T1-E3 数据表(PDF) 3 Page - Vishay Siliconix |
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SI5447DC-T1-E3 数据表(HTML) 3 Page - Vishay Siliconix |
3 / 9 page Document Number: 71256 S09-0129-Rev. C, 02-Feb-09 www.vishay.com 3 Vishay Siliconix Si5447DC TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted On-Resistance vs. Drain Current Gate Charge Source-Drain Diode Forward Voltage 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0369 12 15 ID - Drain Current (A) VGS = 1.8 V VGS = 2.5 V VGS =4.5 V 0 1 2 3 4 5 02 46 8 VDS =10 V ID =3.5 A Qg - Total Gate Charge (nC) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 TJ = 150 °C 20 10 1 VSD - Source-to-Drain Voltage (V) TJ =25 °C Capacitance On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage 0 200 400 600 800 1000 1200 0 4 8 121620 VDS - Drain-to-Source Voltage (V) Crss Coss Ciss 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 VGS =4.5 V ID =3.5 A TJ - Junction Temperature (°C) 0.00 0.05 0.10 0.15 0.20 0.25 0.30 012345 ID =3.5 A VGS - Gate-to-Source Voltage (V) |
类似零件编号 - SI5447DC-T1-E3 |
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类似说明 - SI5447DC-T1-E3 |
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