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STFW6N120K3 数据表(PDF) 3 Page - STMicroelectronics |
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STFW6N120K3 数据表(HTML) 3 Page - STMicroelectronics |
3 / 17 page STFW6N120K3, STP6N120K3, STW6N120K3 Electrical ratings Doc ID 15572 Rev 3 3/17 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit TO-3PF TO-220 TO-247 VGS Gate- source voltage ± 30 V ID Drain current (continuous) at TC = 25 °C 6 A ID Drain current (continuous) at TC = 100 °C 3.8 A IDM (1) 1. Pulse width limited by safe operating area Drain current (pulsed) 20 A PTOT Power dissipation at TC = 25 °C 63 150 150 W IAR Max current during repetitive or single pulse avalanche (pulse width limited by TJMAX) 7A EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V) 180 mJ ESD Gate-source human body model (C = 100 pF, R = 1.5 k Ω) 6kV VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s, TC = 25 °C) 3500 V Tstg Storage temperature -55 to 150 °C TJ Operating junction temperature Table 3. Thermal data Symbol Parameter Value Unit TO-3PF TO-220 TO-247 Rthj-case Thermal resistance junction-case 1.98 0.83 °C/W Rthj-amb Thermal resistance junction-ambient max 50 62.5 50 °C/W TJ Maximum lead temperature for soldering purpose 300 °C |
类似零件编号 - STFW6N120K3 |
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类似说明 - STFW6N120K3 |
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