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IXTT16P60P 数据表(PDF) 1 Page - IXYS Corporation

部件名 IXTT16P60P
功能描述  Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode
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制造商  IXYS [IXYS Corporation]
网页  http://www.ixys.com
标志 IXYS - IXYS Corporation

IXTT16P60P 数据表(HTML) 1 Page - IXYS Corporation

  IXTT16P60P Datasheet HTML 1Page - IXYS Corporation IXTT16P60P Datasheet HTML 2Page - IXYS Corporation IXTT16P60P Datasheet HTML 3Page - IXYS Corporation IXTT16P60P Datasheet HTML 4Page - IXYS Corporation IXTT16P60P Datasheet HTML 5Page - IXYS Corporation  
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© 2008 IXYS CORPORATION, All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
°C to 150°C
- 600
V
V
DGR
T
J
= 25
°C to 150°C, R
GS = 1MΩ
- 600
V
V
GSS
Continuous
±20
V
V
GSM
Transient
±30
V
I
D25
T
C = 25°C
- 16
A
I
DM
T
C = 25°C, pulse width limited by TJM
- 48
A
I
AR
T
C = 25°C
- 16
A
E
AS
T
C = 25°C
2.5
J
dV/dt
I
S
≤ I
DM, VDD ≤ VDSS, TJ ≤ 150°C
10
V/ns
P
D
T
C = 25°C
460
W
T
J
- 55 ... +150
°C
T
JM
150
°C
T
stg
- 55 ... +150
°C
T
L
1.6mm (0.062 in.) from case for 10s
300
°C
T
SOLD
Plastic body for 10s
260
°C
M
d
Mounting torque
(TO-247)
1.13 / 10
Nm/lb.in.
Weight
TO-268
5
g
TO-247
6
g
DS99988(5/08)
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, unless otherwise specified)
Min.
Typ.
Max.
BV
DSS
V
GS = 0V, ID = - 250μA
- 600
V
V
GS(th)
V
DS = VGS, ID = - 250μA
- 2.5
- 4.5
V
I
GSS
V
GS = ±20V, VDS = 0V
±100 nA
I
DSS
V
DS = VDSS
- 25
μA
V
GS = 0V
T
J = 125°C
- 200
μA
R
DS(on)
V
GS = -10V, ID = 0.5 • ID25, Note 1
720 m
Ω
PolarPTM
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
IXTH16P60P
IXTT16P60P
V
DSS
= - 600V
I
D25
= - 16A
R
DS(on)
≤≤≤≤
720m
Ω
Ω
Ω
Ω
Ω
Preliminary Technical Information
Features:
International standard packages
Avalanche Rated
Rugged PolarPTM process
Low package inductance
- easy to drive and to protect
Applications:
High side switching
Push-pull amplifiers
DC Choppers
Current regulators
Automatic test equipment
Advantages:
Low gate charge results in simple
drive requirement
High power density
Fast switching
Easy to parallel
G = Gate
D
= Drain
S = Source
TAB = Drain
TO-247 (IXTH)
G
D
S
D (TAB)
TO-268 (IXTT)
G
S
D (TAB)


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