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IXTT16P60P 数据表(PDF) 2 Page - IXYS Corporation

部件名 IXTT16P60P
功能描述  Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode
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制造商  IXYS [IXYS Corporation]
网页  http://www.ixys.com
标志 IXYS - IXYS Corporation

IXTT16P60P 数据表(HTML) 2 Page - IXYS Corporation

  IXTT16P60P Datasheet HTML 1Page - IXYS Corporation IXTT16P60P Datasheet HTML 2Page - IXYS Corporation IXTT16P60P Datasheet HTML 3Page - IXYS Corporation IXTT16P60P Datasheet HTML 4Page - IXYS Corporation IXTT16P60P Datasheet HTML 5Page - IXYS Corporation  
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IXTH16P60P
IXTT16P60P
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS = -10V, ID = 0.5 • ID25, Note 1
11
18
S
C
iss
5120
pF
C
oss
V
GS = 0V, VDS = - 25V, f = 1MHz
445
pF
C
rss
60
pF
t
d(on)
29
ns
t
r
25
ns
t
d(off)
60
ns
t
f
38
ns
Q
g(on)
92
nC
Q
gs
V
GS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
27
nC
Q
gd
23
nC
R
thJC
0.27
°C/W
R
thCS
0.21
°C/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, unless otherwise specified)
Min.
Typ.
Max.
I
S
V
GS = 0V
- 16
A
I
SM
Repetitive, pulse width limited by T
JM
- 64
A
V
SD
I
F = - 8A, VGS = 0V, Note 1
- 2.8
V
t
rr
440
ns
Q
RM
7.4
μC
I
RM
- 33.6
A
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692
7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
Note 1: Pulse test, t
≤ 300μs; duty cycle, d ≤ 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
Resistive Switching Times
V
GS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
R
G = 3Ω (External)
I
F = - 8A, -di/dt = -150A/μs
V
R = - 100V, VGS = 0V
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.7
5.3
.185
.209
A
1
2.2
2.54
.087
.102
A
2
2.2
2.6
.059
.098
b
1.0
1.4
.040
.055
b
1
1.65
2.13
.065
.084
b
2
2.87
3.12
.113
.123
C
.4
.8
.016
.031
D
20.80 21.46
.819
.845
E
15.75 16.26
.610
.640
e
5.20
5.72 0.205 0.225
L
19.81 20.32
.780
.800
L1
4.50
.177
∅P
3.55
3.65
.140
.144
Q
5.89
6.40 0.232 0.252
R
4.32
5.49
.170
.216
e
∅ P
TO-247 (IXTH) Outline
1
2
3
Terminals: 1 - Gate
2 - Drain
TO-268 (IXTT) Outline


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