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FJV4110R 数据表(PDF) 1 Page - Fairchild Semiconductor |
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FJV4110R 数据表(HTML) 1 Page - Fairchild Semiconductor |
1 / 4 page ©2002 Fairchild Semiconductor Corporation Rev. A, August 2002 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T a=25°C unless otherwise noted Electrical Characteristics T a=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -100 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC= -100µA, IE=0 -40 V BVCEO Collector-Emitter Breakdown Voltage IE= -1mA, IB=0 -40 V ICBO Collector Cut-off Current VCB= -30V, IE=0 -0.1 µA hFE DC Current Gain VCE= -5V, IC= -1mA 100 600 VCE (sat) Collector-Emitter Saturation Voltage IC= -10mA, IB= -1mA -0.3 V Cob Output Capacitance VCB= -10V, IE=0 f=1MHz 5.5 pF fT Current Gain Bandwidth Product VCE= -10V, IC= -5mA 200 MHz R Input Resistor 7 10 13 K Ω FJV4110R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R=10K Ω) • Complement to FJV3110R Equivalent Circuit B E C R R8 0 Marking SOT-23 1. Base 2. Emitter 3. Collector 1 2 3 |
类似零件编号 - FJV4110R |
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类似说明 - FJV4110R |
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