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SI7620DN-T1-GE3 数据表(PDF) 2 Page - Vishay Siliconix |
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SI7620DN-T1-GE3 数据表(HTML) 2 Page - Vishay Siliconix |
2 / 13 page www.vishay.com 2 Document Number: 68702 S-81215-Rev. A, 02-Jun-08 Vishay Siliconix Si7620DN Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 150 V VDS Temperature Coefficient ΔV DS/TJ ID = 250 µA 180 mV/°C VGS(th) Temperature Coefficient ΔV GS(th)/TJ - 9 Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = 250 µA 2.5 4.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 150 V, VGS = 0 V 1 µA VDS = 150 V, VGS = 0 V, TJ = 55 °C 5 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 13 A Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 3.6 A 0.103 0.126 Ω Forward Transconductancea gfs VDS = 15 V, ID = 3.6 A 10 S Dynamicb Input Capacitance Ciss VDS = 75 V, VGS = 0 V, f = 1 MHz 600 pF Output Capacitance Coss 50 Reverse Transfer Capacitance Crss 15 Total Gate Charge Qg VDS = 75 V, VGS = 10 V, ID = 3.6 A 9.5 15 nC Gate-Source Charge Qgs 3 Gate-Drain Charge Qgd 2.5 Gate Resistance Rg f = 1 MHz 1.1 2.2 Ω Turn-On Delay Time td(on) VDD = 75 V, RL = 26 Ω ID ≅ 2.9 A, VGEN = 10 V, Rg = 1 Ω 12 20 ns Rise Time tr 510 Turn-Off Delay Time td(off) 15 25 Fall Time tf 510 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 13 A Pulse Diode Forward Current ISM 15 Body Diode Voltage VSD IS = 2.9 A, VGS = 0 V 0.8 1.2 V Body Diode Reverse Recovery Time trr IF = 2.9 A, dI/dt = 100 A/µs, TJ = 25 °C 50 75 ns Body Diode Reverse Recovery Charge Qrr 125 190 nC Reverse Recovery Fall Time ta 37 ns Reverse Recovery Rise Time tb 13 |
类似零件编号 - SI7620DN-T1-GE3 |
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类似说明 - SI7620DN-T1-GE3 |
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