SI2305DS-T1-E3 datasheet(4/8 Pages) VISHAY

部件名	SI2305DS-T1-E3

功能描述	P-Channel 1.25-W, 1.8-V (G-S) MOSFET

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制造商	VISHAY [Vishay Siliconix]

网页	http://www.vishay.com

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Document Number: 70833

S09-0133-Rev. E, 02-Feb-09

Vishay Siliconix

Si2305DS

TYPICAL CHARACTERISTICS 25 °C, unless otherwse noted

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

reliability data, see www.vishay.com/ppg?70833.

Source-Drain Diode Forward Voltage

Threshold Voltage

1.0

1.2

0.1

10

30

0

0.2

0.4

0.6

0.8

TJ = 25 °C

TJ = 150 °C

VSD - Source-to-Drain Voltage (V)

1

- 0.2

- 0.1

0.0

0.1

0.2

0.3

0.4

- 50

- 25

0

25

50

75

100

125

150

ID = 250 µA

TJ - Temperature (°C)

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power

0

0.1

0.2

0.3

0.4

0.5

024

68

ID = 3.5 A

VGS - Gate-to-Source Voltage (V)

0.01

0

1

6

12

2

4

10

500

0.1

Time (s)

8

10

100

TA = 25 °C

Normalized Thermal Transient Impedance, Junction-to-Ambient

Square Wave Pulse Duration (s)

2

1

0.1

0.01

10- 3

10- 2

1

10

500

10- 1

10- 4

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

Single Pulse

100

1. Duty Cycle, D =

2. Per Unit Base = R thJA = 130 °C/W

3. T JM - T A = PDMZthJA(t)

t1

t2

t1

t2

Notes:

4. Surface Mounted

PDM

类似零件编号 - SI2305DS-T1-E3

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类似说明 - SI2305DS-T1-E3

制造商	部件名	数据表	功能描述
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