STGW45NC60WD datasheet(4/14 Pages) STMICROELECTRONICS

部件名	STGW45NC60WD

功能描述	45 A - 600 V ultra fast IGBT

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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Electrical characteristics

STGW45NC60WD

4/14

2

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 4.

Static (electrical characteristics)

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

V(BR)CES

Collector-emitter breakdown

voltage (VGE = 0)

IC = 1 mA

600

V

VCE(sat)

Collector-emitter saturation

voltage

VGE= 15 V, IC= 30 A

VGE= 15 V, IC= 30 A, Tc= 125 °C

2.1

1.9

2.6

V

VGE(th)

Gate threshold voltage

VCE= VGE, IC= 250 µA

3.75

5.75

V

ICES

Collector-emitter leakage

current (VGE = 0)

VCE = 600 V

VCE = 600 V, Tc=125 °C

500

5

µA

mA

IGES

Gate-emitter leakage

current (VCE = 0)

VGE = ± 20 V

±100

nA

gfs

(1)

1.

Pulsed: pulse duration = 300 ìs, duty cycle 1.5%

Forward transconductance

VCE = 15 V, IC= 30 A

20

S

Table 5.

Dynamic (electrical characteristics)

Symbol

Parameter

Test conditions

Min.

Typ. Max. Unit

Cies

Coes

Cres

Input capacitance

Output capacitance

Reverse transfer

capacitance

VCE = 25 V, f = 1 MHz, VGE= 0

2900

298

59

pF

Qg

Qge

Qgc

Total gate charge

Gate-emitter charge

Gate-collector charge

VCE = 390 V, IC = 30 A,

VGE = 15 V,

(see Figure 18)

126

16

46

nC

类似零件编号 - STGW45NC60WD

制造商	部件名	数据表	功能描述
STMicroelectronics	STGW45NC60VD	370Kb / 15P	45 A - 600 V - very fast IGBT

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类似说明 - STGW45NC60WD

制造商	部件名	数据表	功能描述
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STGW45NC60WD 数据表(PDF) 4 Page - STMicroelectronics

STGW45NC60WD 数据表(HTML) 4 Page - STMicroelectronics

类似零件编号 - STGW45NC60WD

类似说明 - STGW45NC60WD

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链接网址

STGW45NC60WD 数据表(PDF) 4 Page - STMicroelectronics

STGW45NC60WD 数据表(HTML) 4 Page - STMicroelectronics

类似零件编号 - STGW45NC60WD

类似说明 - STGW45NC60WD

Html Pages

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数据表 下载

链接网址

数据表下载