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STD11NM50N 数据表(PDF) 1 Page - STMicroelectronics |
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STD11NM50N 数据表(HTML) 1 Page - STMicroelectronics |
1 / 16 page November 2010 Doc ID 17156 Rev 3 1/16 16 STD11NM50N STF11NM50N, STP11NM50N N-channel 500 V, 0.4 Ω, 8.5 A MDmesh™ II Power MOSFET in DPAK, TO-220FP and TO-220 Features ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Application Switching applications Description These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Figure 1. Internal schematic diagram Order codes VDSS @TJmax RDS(on) max ID STD11NM50N STF11NM50N STP11NM50N 550 V < 0.47 Ω 8.5 A DPAK 1 3 1 2 3 TO-220 1 2 3 TO-220FP Table 1. Device summary Order codes Marking Package Packaging STD11NM50N 11NM50N DPAK Tape and reel STF11NM50N 11NM50N TO-220FP Tube STP11NM50N 11NM50N TO-220 Tube www.st.com |
类似零件编号 - STD11NM50N |
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类似说明 - STD11NM50N |
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