FDZ7064N datasheet(2/6 Pages) FAIRCHILD

部件名	FDZ7064N

功能描述	30V N-Channel Logic Level PowerTrench BGA MOSFET

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制造商	FAIRCHILD [Fairchild Semiconductor]

网页	http://www.fairchildsemi.com

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FDZ7064N Rev D4 (W)

Electrical Characteristics

T

A = 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

Drain–Source Breakdown Voltage

VGS = 0 V,

ID = 250 µA

30

V

∆BVDSS

∆TJ

Breakdown Voltage Temperature

Coefficient

ID = 250 µA, Referenced to 25°C

21

mV/

°C

IDSS

Zero Gate Voltage Drain Current

VDS = 24 V,

VGS = 0 V

1

µA

IGSSF

Gate–Body Leakage, Forward

VGS = 12 V,

VDS = 0 V

100

nA

IGSSR

Gate–Body Leakage, Reverse

VGS = –12 V, VDS = 0 V

–100

nA

On Characteristics

(Note 2)

VGS(th)

Gate Threshold Voltage

VDS = VGS,

ID = 250 µA

0.8

1.2

2.0

V

∆VGS(th)

∆TJ

Gate Threshold Voltage

Temperature Coefficient

ID = 250 µA, Referenced to 25°C

–4.6

mV/

°C

RDS(on)

Static Drain–Source

On–Resistance

VGS = 4.5 V,

ID = 13.5 A

VGS = 10 V,

ID = 14.5 A

VGS = 4.5 V, ID = 13.5A, TJ =125°C

6.1

5.4

9.0

8.0

7.0

13

m

Ω

gFS

Forward Transconductance

VDS = 10 V,

ID = 13.5 A

92

S

Dynamic Characteristics

Ciss

Input Capacitance

3843

pF

Coss

Output Capacitance

522

pF

Crss

Reverse Transfer Capacitance

VDS = 15 V,

V GS = 0 V,

f = 1.0 MHz

209

pF

Switching Characteristics (Note 2)

td(on)

Turn–On Delay Time

10

20

ns

tr

Turn–On Rise Time

9

18

ns

td(off)

Turn–Off Delay Time

71

114

ns

tf

Turn–Off Fall Time

VDD = 15 V,

ID = 1 A,

VGS = 10 V,

RGEN = 6 Ω

18

32

ns

Qg

Total Gate Charge

31

43

nC

Qgs

Gate–Source Charge

8

nC

Qgd

Gate–Drain Charge

VDS = 15 V,

ID = 13.5 A,

VGS = 4.5 V

7.4

nC

Drain–Source Diode Characteristics and Maximum Ratings

IS

Maximum Continuous Drain–Source Diode Forward Current

1.8

A

VSD

Drain–Source Diode Forward

Voltage

VGS = 0 V,

IS = 1.8 A (Note 2)

0.7

1.2

V

trr

Diode Reverse Recovery Time

30

nS

Qrr

Diode Reverse Recovery Charge

IF = 13.5 A,

diF/dt = 100 A/µs

35

nC

Notes:

1. RθJA is determined with the device mounted on a 1 in² 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the

circuit board side of the solder ball, RθJB, is defined for reference. For RθJC, the thermal reference point for the case is defined as the top surface of the copper

chip carrier. RθJC and RθJB are guaranteed by design while RθJA is determined by the user's board design.

a)

56°C/W when

mounted on a 1in2 pad

of 2 oz copper

b)

119°C/W when mounted

on a minimum pad of 2 oz

copper

Scale 1 : 1 on letter size paper

2.Pulse Test: Pulse Width <

300

µs, Duty Cycle < 2.0%

类似零件编号 - FDZ7064N

制造商	部件名	数据表	功能描述
Fairchild Semiconductor	FDZ7064AS	599Kb / 7P	30V N-Channel PowerTrench SyncFET BGA MOSFET
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制造商	部件名	数据表	功能描述
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FDZ7064N 数据表(PDF) 2 Page - Fairchild Semiconductor

FDZ7064N 数据表(HTML) 2 Page - Fairchild Semiconductor

类似零件编号 - FDZ7064N

类似说明 - FDZ7064N

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FDZ7064N 数据表(PDF) 2 Page - Fairchild Semiconductor

FDZ7064N 数据表(HTML) 2 Page - Fairchild Semiconductor

类似零件编号 - FDZ7064N

类似说明 - FDZ7064N

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数据表下载