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FDZ7064N 数据表(PDF) 2 Page - Fairchild Semiconductor |
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FDZ7064N 数据表(HTML) 2 Page - Fairchild Semiconductor |
2 / 6 page FDZ7064N Rev D4 (W) Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 30 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C 21 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 µA IGSSF Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –12 V, VDS = 0 V –100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 0.8 1.2 2.0 V ∆VGS(th) ∆TJ Gate Threshold Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C –4.6 mV/ °C RDS(on) Static Drain–Source On–Resistance VGS = 4.5 V, ID = 13.5 A VGS = 10 V, ID = 14.5 A VGS = 4.5 V, ID = 13.5A, TJ =125°C 6.1 5.4 9.0 8.0 7.0 13 m Ω gFS Forward Transconductance VDS = 10 V, ID = 13.5 A 92 S Dynamic Characteristics Ciss Input Capacitance 3843 pF Coss Output Capacitance 522 pF Crss Reverse Transfer Capacitance VDS = 15 V, V GS = 0 V, f = 1.0 MHz 209 pF Switching Characteristics (Note 2) td(on) Turn–On Delay Time 10 20 ns tr Turn–On Rise Time 9 18 ns td(off) Turn–Off Delay Time 71 114 ns tf Turn–Off Fall Time VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 18 32 ns Qg Total Gate Charge 31 43 nC Qgs Gate–Source Charge 8 nC Qgd Gate–Drain Charge VDS = 15 V, ID = 13.5 A, VGS = 4.5 V 7.4 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current 1.8 A VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 1.8 A (Note 2) 0.7 1.2 V trr Diode Reverse Recovery Time 30 nS Qrr Diode Reverse Recovery Charge IF = 13.5 A, diF/dt = 100 A/µs 35 nC Notes: 1. RθJA is determined with the device mounted on a 1 in² 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the circuit board side of the solder ball, RθJB, is defined for reference. For RθJC, the thermal reference point for the case is defined as the top surface of the copper chip carrier. RθJC and RθJB are guaranteed by design while RθJA is determined by the user's board design. a) 56°C/W when mounted on a 1in2 pad of 2 oz copper b) 119°C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2.Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% |
类似零件编号 - FDZ7064N |
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类似说明 - FDZ7064N |
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