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TC1016-2.6VLTTR 数据表(PDF) 2 Page - Microchip Technology |
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TC1016-2.6VLTTR 数据表(HTML) 2 Page - Microchip Technology |
2 / 22 page TC1016 DS21666B-page 2 © 2005 Microchip Technology Inc. 1.0 ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS* Input Voltage .........................................................6.5V Power Dissipation................ Internally Limited (Note 7) Operating Temperature ................. -40°C < TJ < 125°C Storage Temperature......................... -65°C to +150°C Maximum Voltage On Any Pin........ VIN + 0.3V to -0.3V *Notice: Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static dis- charge and static fields. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional oper- ation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to Absolute Maximum Rating Conditions for extended periods may affect device reliability ELECTRICAL CHARACTERISTICS VIN = VR + 1V, IL = 100 µA, CL = 1.0µF, SHDN > VIH, TA = 25°C, unless otherwise noted. Boldface type specifications apply for junction temperatures of – 40°C to +125°C. Parameter Sym Min Typ Max Units Test Conditions Input Operating Voltage VIN 2.7 — 6.0 V Note 1 Maximum Output Current IOUTMAX 80 —— mA Output Voltage VOUT VR – 2.5% VR ±0.5% VR + 2.5% V Note 2 V OUT Temperature Coefficient TCVOUT — 40 — ppm/°C Note 3 Line Regulation (ΔVOUT/ΔVIN)/V R —0.01 0.2 %/V (VR + 1V) < VIN < 6V Load Regulation (Note 4) ΔVOUT/VR —0.23 1 %IL = 0.1 mA to IOUTMAX Dropout Voltage (Note 5)VIN – VOUT — — — 2 100 150 — 200 300 mV IL = 100 µA IL = 50 mA IL = 80 mA Supply Current IIN —53 90 µA SHDN = VIH, IL = 0 Shutdown Supply Current IINSD — 0.05 0.5 µA SHDN = 0V Power Supply Rejection Ratio PSRR — 58 — dB f =1 kHz, IL = 50 mA Wake-Up Time (from Shutdown mode) tWK —10 — µs VIN = 5V, IL = 60 mA, CIN = 1 µF, COUT = 1 µF, f = 100 Hz Settling Time (from Shutdown Mode) tS —32 — µs VIN = 5V, IL = 60 mA,CIN = 1µF, COUT = 1 µF, f = 100 Hz Output Short Circuit Current IOUTSC — 120 — mA VOUT = 0V Thermal Regulation VOUT/PD —0.04 — V/W Notes 6, 7 Thermal Shutdown Die Temperature TSD — 160 — °C Thermal Shutdown Hysteresis ΔTSD —10 — °C Output Noise eN — 800 — nV/ √Hz f = 10 kHz SHDN Input High Threshold VIH 60 —— %VIN VIN = 2.7V to 6.0V SHDN Input Low Threshold VIL —— 15 %VIN VIN = 2.7V to 6.0V Note 1: The minimum V IN has to meet two conditions: VIN ≥ 2.7V and VIN ≥ (VR + 2.5%)+VDROPOUT. 2: V R is the regulator voltage setting. For example: VR = 1.8V, 2.7V, 2.8V, 3.0V. 3: 4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the Thermal Regulation specification. 5: Dropout voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal value at a 1V differential. 6: Thermal regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or line regulation effects. Specifications are for a current pulse equal to Ilmax at V IN = 6V for t = 10 msec. 7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable juction temperature and the thermal resistance from junction-to-air (i.e. T A, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate thermal shutdown. Please see Section 5.0 “Thermal Considerations” of this data sheet for more details. TCV OUT V OUTMAX V OUTMIN – () 10 6 × V OUT T Δ × -------------------------------------------------------------------------------------- = |
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