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FDS8958A Datasheet(数据表) 2 Page - Fairchild Semiconductor

部件型号  FDS8958A
说明  Dual N and P-Channel Enhancement Mode Field Effect Transistor
下载  12 Pages
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制造商  FAIRCHILD [Fairchild Semiconductor]
网页  http://www.fairchildsemi.com
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FDS8958A Datasheet(HTML) 2 Page - Fairchild Semiconductor

 
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FDS8958A Rev D(W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min
Typ Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown
Voltage
VGS = 0 V, ID = 250
µA
VGS = 0 V, ID = -250
µA
Q1
Q2
30
-30
V
∆BVDSS
∆T
J
Breakdown Voltage
Temperature Coefficient
ID = 250
µA, Referenced to 25°C
ID = -250 µA, Referenced to 25
°C
Q1
Q2
25
-22
mV/
°C
IDSS
Zero Gate Voltage Drain
Current
VDS = 24 V, VGS = 0 V
VDS = -24 V, VGS = 0 V
Q1
Q2
1
-1
µA
IGSSF
Gate-Body Leakage, Forward
VGS = 20 V, VDS = 0 V
All
100
nA
IGSSR
Gate-Body Leakage, Reverse VGS = -20 V, VDS = 0 V
All
-100
nA
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250
µA
VDS = VGS, ID = -250 µA
Q1
Q2
1
-1
1.6
-1.7
3
-3
V
∆VGS(th)
∆T
J
Gate Threshold Voltage
Temperature Coefficient
ID = 250
µA, Referenced to 25°C
ID = -250 µA, Referenced to 25
°C
Q1
Q2
-4.3
4
mV/
°C
VGS = 10 V, ID = 7 A
VGS = 10 V, ID = 7 A, TJ = 125
°C
VGS = 4.5 V, ID = 6 A
Q1
21
32
27
28
42
40
m
RDS(on)
Static Drain-Source
On-Resistance
VGS = -10 V, ID = -5 A
VGS = -10 V, ID = -5 A, TJ = 125
°C
VGS = -4.5 V, ID = -4 A
Q2
41
58
58
52
78
80
ID(on)
On-State Drain Current
VGS = 10 V, VDS = 5 V
VGS = -10 V, VDS = -5 V
Q1
Q2
20
-20
A
gFS
Forward Transconductance
VDS = 5 V, ID = 7 A
VDS = -5 V, ID =-5 A
Q1
Q2
19
11
S
Dynamic Characteristics
Ciss
Input Capacitance
Q1
Q2
789
690
pF
Coss
Output Capacitance
Q1
Q2
173
306
pF
Crss
Reverse Transfer Capacitance
Q1
VDS = 10 V, VGS = 0 V, f = 1.0 MHz
Q2
VDS = -10 V, VGS = 0 V, f = 1.0 MHz
Q1
Q2
66
77
pF




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