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FDS8958A Datasheet(数据表) 1 Page - Fairchild Semiconductor

部件型号  FDS8958A
说明  Dual N and P-Channel Enhancement Mode Field Effect Transistor
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制造商  FAIRCHILD [Fairchild Semiconductor]
网页  http://www.fairchildsemi.com
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FDS8958A Datasheet(HTML) 1 Page - Fairchild Semiconductor

 
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January 2001
2001 Fairchild Semiconductor International
FDS8958A Rev D(W)
FDS8958A
Dual N & P-Channel PowerTrench
MOSFET
General Description
These dual N- and P-Channel enhancement mode
power field effect transistors are produced using
Fairchild
Semiconductor’s
advanced
PowerTrench
process that has been especially tailored to minimize
on-state ressitance and yet maintain superior switching
performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
Q1:
N-Channel
7.0A, 30V
R
DS(on) = 0.028Ω @ VGS = 10V
R
DS(on) = 0.040Ω @ VGS = 4.5V
Q2:
P-Channel
-5A, -30V
R
DS(on) = 0.052Ω @ VGS = -10V
R
DS(on) = 0.080Ω @ VGS = -4.5V
Fast switching speed
High power and handling capability in a widely
used surface mount package
S
D
S
S
SO-8
D
D
D
G
D1
D1
D2
D2
S1
G1
S2
G2
Pin 1
SO-8
4
3
2
1
5
6
7
8
Q1
Q2
Absolute Maximum Ratings T
A
= 25°C unless otherwise noted
Symbol
Parameter
Q1
Q2
Units
VDSS
Drain-Source Voltage
30
30
V
VGSS
Gate-Source Voltage
±20
±20
V
ID
Drain Current
- Continuous
(Note 1a)
7-5
A
- Pulsed
20
-20
PD
Power Dissipation for Dual Operation
2
W
Power Dissipation for Single Operation
(Note 1a)
1.6
(Note 1b)
1
(Note 1c)
0.9
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
40
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS8958A
FDS8958A
13”
12mm
2500 units




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