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FDS8958A Datasheet(数据表) 5 Page - Fairchild Semiconductor

部件型号  FDS8958A
说明  Dual N and P-Channel Enhancement Mode Field Effect Transistor
下载  12 Pages
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制造商  FAIRCHILD [Fairchild Semiconductor]
网页  http://www.fairchildsemi.com
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FDS8958A Datasheet(HTML) 5 Page - Fairchild Semiconductor

 
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FDS8958A Rev D(W)
Typical Characteristics: Q1
0
2
4
6
8
10
04
8
12
16
Qg, GATE CHARGE (nC)
ID =7A
VDS = 5V
15V
10V
0
300
600
900
1200
0.0
5.0
10.0
15.0
20.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
CISS
CRSS
COSS
f = 1MHz
VGS = 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
DC
10s
1s
100ms
100µs
RDS(ON) LIMIT
VGS = 10V
SINGLE PULSE
RθJA = 135
oC/W
TA = 25
oC
10ms
1ms
0
10
20
30
40
50
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
SINGLE PULSE
RθJA = 135°C/W
TA = 25°C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.




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