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FDS8958A Datasheet(数据表) 3 Page - Fairchild Semiconductor

部件型号  FDS8958A
说明  Dual N and P-Channel Enhancement Mode Field Effect Transistor
下载  12 Pages
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制造商  FAIRCHILD [Fairchild Semiconductor]
网页  http://www.fairchildsemi.com
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FDS8958A Datasheet(HTML) 3 Page - Fairchild Semiconductor

 
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FDS8958A Rev D(W)
Electrical Characteristics (continued)
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min
Typ
Max Units
Switching Characteristics (Note 2)
td(on)
Turn-On Delay Time
Q1
Q2
2.2
6.7
4.4
13.4
ns
tr
Turn-On Rise Time
Q1
Q2
7.5
9.7
15
19.4
ns
td(off)
Turn-Off Delay Time
Q1
Q2
11.8
19.8
21.3
35.6
ns
tf
Turn-Off Fall Time
Q1
VDD = 10 V, ID = 1 A,
VGS = 10V, RGEN = 6
Q2
VDD = -10 V, ID = -1 A,
VGS = -10V, RGEN = 6
Q1
Q2
3.7
12.3
7.4
22.2
ns
Qg
Total Gate Charge
Q1
Q2
16
14
26
23
nC
Qgs
Gate-Source Charge
Q1
Q2
2.5
2.4
nC
Qgd
Gate-Drain Charge
Q1
VDS = 15 V, ID = 7 A, VGS = 10 V
Q2
VDS = -15 V, ID = -5 A,VGS = -10 V
Q1
Q2
2.6
4.8
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
Q1
Q2
1.3
-1.3
A
VSD
Drain-Source Diode Forward
Voltage
VGS = 0 V, IS = 1.3 A
(Note 2)
VGS = 0 V, IS = -1.3 A
(Note 2)
Q1
Q2
0.74
-0.76
1.2
-1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 78°/W when
mounted on a
0.5 in
2 pad of 2 oz
copper
b) 125°/W when
mounted on a .02 in
2
pad of 2 oz copper
c) 135°/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300
µs, Duty Cycle < 2.0%




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