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LM1117IMPX-3.3 数据表(PDF) 2 Page - Texas Instruments |
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LM1117IMPX-3.3 数据表(HTML) 2 Page - Texas Instruments |
2 / 30 page LM1117-N SNOS412L – MAY 2004 – REVISED JULY 2012 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Block Diagram Connection Diagrams Figure 2. SOT-223 Top View Figure 3. TO-220 Top View Figure 4. TO-252 Top View 2 Submit Documentation Feedback Copyright © 2004–2012, Texas Instruments Incorporated Product Folder Links: LM1117-N |
类似零件编号 - LM1117IMPX-3.3 |
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类似说明 - LM1117IMPX-3.3 |
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