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FDS8333C 数据表(PDF) 1 Page - Fairchild Semiconductor |
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FDS8333C 数据表(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page August 2002 ©2002 Fairchild Semiconductor Corporation FDS8333C Rev C (W) FDS8333C 30V N & P-Channel PowerTrench® MOSFETs General Description These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features • Q1 4.1 A, 30V. RDS(ON) = 80 m Ω @ VGS = 10 V RDS(ON) = 130 m Ω @ VGS = 4.5 V • Q2 –3.4 A, 30V. RDS(ON) = 130 m Ω @ VGS = –10 V RDS(ON) = 200 m Ω @ VGS = –4.5 V • Low gate charge • High performance trench technology for extremely low RDS(ON). • High power and handling capability in a widely used surface mount package. S D S S SO-8 D D D G D1 D1 D2 D2 S1 G1 S2 G2 Pin 1 SO-8 4 3 2 1 5 6 7 8 Q1 Q2 Absolute Maximum Ratings T A=25 oC unless otherwise noted Symbol Parameter Q1 Q2 Units VDSS Drain-Source Voltage 30 –30 V VGSS Gate-Source Voltage ±16 ±20 ID Drain Current – Continuous (Note 1a) 4.1 –3.4 A – Pulsed 20 –20 Power Dissipation for Dual Operation 2 Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 PD (Note 1c) 0.9 W TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 40 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS8333C FDS8333C 7’’ 12mm 2500 units |
类似零件编号 - FDS8333C |
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类似说明 - FDS8333C |
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