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FDS6892AZ 数据表(PDF) 4 Page - Fairchild Semiconductor |
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FDS6892AZ 数据表(HTML) 4 Page - Fairchild Semiconductor |
4 / 5 page FDS6892AZ Rev C (W) Typical Characteristics 0 1 2 3 4 5 0 2 4 6 8 10 12 14 Qg, GATE CHARGE (nC) I D = 7.5 A VDS = 5V 10V 15V 0 400 800 1200 1600 2000 0 5 10 15 20 VDS, DRAIN TO SOURCE VOLTAGE (V) C ISS COSS CRSS f = 1 MHz VGS = 0 V Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 0.01 0.1 1 10 100 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) DC 10s 1s 100ms 100 µs R DS(ON) LIMIT V GS = 4.5V SINGLE PULSE RθJA = 135 oC/W TA = 25 oC 10ms 1ms 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 t1, TIME (sec) SINGLE PULSE RθJA = 135°C/W TA = 25°C Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) RθJA(t) = r(t) * RθJA RθJA = 135 oC/W TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 P(pk) t1 t2 SINGLE PULSE 0.01 0.02 0.05 0.1 0.2 D = 0.5 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. |
类似零件编号 - FDS6892AZ |
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类似说明 - FDS6892AZ |
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