FDS6812 datasheet(2/5 Pages) FAIRCHILD

部件名	FDS6812

功能描述	Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET

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制造商	FAIRCHILD [Fairchild Semiconductor]

网页	http://www.fairchildsemi.com

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FDS6812A Rev B (W)

Electrical Characteristics

T

A = 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max Units

Off Characteristics

BVDSS

Drain–Source Breakdown Voltage

VGS = 0 V,

ID = 250

µA

20

V

∆BVDSS

∆T

J

Breakdown Voltage Temperature

Coefficient

ID = 250

µA, Referenced to 25°C

14

mV/

°C

IDSS

Zero Gate Voltage Drain Current

VDS = 16 V,

VGS = 0 V

VDS = 16 V, VGS = 0 V, TJ = 55

°C

1

10

µA

IGSSF

Gate–Body Leakage, Forward

VGS = 12 V,

VDS = 0 V

100

nA

IGSSR

Gate–Body Leakage, Reverse

VGS = –12 V, VDS = 0 V

–100

nA

On Characteristics

(Note 2)

VGS(th)

Gate Threshold Voltage

VDS = VGS,

ID = 250

µA

0.6

0.8

1.5

V

∆VGS(th)

∆T

J

Gate Threshold Voltage

Temperature Coefficient

ID = 250

µA, Referenced to 25°C

–3.2

mV/

°C

RDS(on)

Static Drain–Source

On–Resistance

VGS = 4.5 V,

ID = 6.7 A

VGS = 2.5 V,

ID = 5.3 A

VGS = 4.5 V,ID = 7.5 A,TJ = 125

°C

17

22

23

22

35

29

m

Ω

ID(on)

On–State Drain Current

VGS = 4.5V,

VDS = 5 V

15

A

gFS

Forward Transconductance

VDS = 5 V,

ID = 6.7 A

37

S

Dynamic Characteristics

Ciss

Input Capacitance

1082

pF

Coss

Output Capacitance

277

pF

Crss

Reverse Transfer Capacitance

VDS = 10 V,

V GS = 0 V,

f = 1.0 MHz

130

pF

Switching Characteristics (Note 2)

td(on)

Turn–On Delay Time

8

16

ns

tr

Turn–On Rise Time

8

16

ns

td(off)

Turn–Off Delay Time

24

38

ns

tf

Turn–Off Fall Time

VDD = 10 V,

ID = 1 A,

VGS = 4.5 V,

RGEN = 6

Ω

8

16

ns

Qg

Total Gate Charge

12

19

nC

Qgs

Gate–Source Charge

2

nC

Qgd

Gate–Drain Charge

VDS = 10 V,

ID =6.7 A,

VGS = 4.5 V

3

nC

Drain–Source Diode Characteristics and Maximum Ratings

IS

Maximum Continuous Drain–Source Diode Forward Current

1.3

A

VSD

Drain–Source Diode Forward

Voltage

VGS = 0 V,

IS = 1.3 A

(Note 2)

0.7

1.2

V

Notes:

1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.

a) 78°C/W when

mounted on a 0.5in

2

pad of 2 oz copper

b) 125°C/W when

mounted on a 0.02

in

2 pad of 2 oz

copper

c) 135°C/W when mounted on a

minimum mounting pad.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300

µs, Duty Cycle < 2.0%

类似零件编号 - FDS6812

制造商	部件名	数据表	功能描述
Fairchild Semiconductor	FDS6814	230Kb / 6P	Dual N-Channel 2.5V Specified PowerTrench??MOSFET
Fairchild Semiconductor	FDS6815	231Kb / 6P	Dual P-Channel 2.5V Specified PowerTrench??MOSFET

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类似说明 - FDS6812

制造商	部件名	数据表	功能描述
Fairchild Semiconductor	FDS6898AZ	332Kb / 5P	Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
	FDS6894A	82Kb / 5P	Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
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	FDS6898AZ_F085	332Kb / 5P	Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
	FDS6892A	80Kb / 5P	Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
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	FDS6894AZ	77Kb / 5P	Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
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	FDS6912	219Kb / 8P	Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET

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FDS6812 数据表(PDF) 2 Page - Fairchild Semiconductor

FDS6812 数据表(HTML) 2 Page - Fairchild Semiconductor

类似零件编号 - FDS6812

类似说明 - FDS6812

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数据表下载

链接网址

FDS6812 数据表(PDF) 2 Page - Fairchild Semiconductor

FDS6812 数据表(HTML) 2 Page - Fairchild Semiconductor

类似零件编号 - FDS6812

类似说明 - FDS6812

Html Pages

1 2 3 4 5

数据表 下载

链接网址

数据表下载