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FDS6690A Datasheet(数据表) 1 Page - Fairchild Semiconductor |
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FDS6690A Datasheet(HTML) 1 Page - Fairchild Semiconductor |
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1 page 
©2007 Fairchild Semiconductor Corporation FDS6690A Rev E1 (W) FDS6690A Single N-Channel, Logic-Level, PowerTrench®®®® MOSFET General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features • 11 A, 30 V. RDS(ON) = 12.5 mΩ @ VGS = 10 V RDS(ON) = 17.0 mΩ @ VGS = 4.5 V • Fast switching speed • Low gate charge • High performance trench technology for extremely low RDS(ON) • High power and current handling capability S D S S SO-8 D D D G D D D D S S S G Pin 1 SO-8 4 3 2 1 5 6 7 8 Absolute Maximum Ratings T A=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V ID Drain Current – Continuous (Note 1a) 11 A – Pulsed 50 Power Dissipation for Single Operation (Note 1a) 2.5 PD (Note 1b) 1.0 W EAS Single Pulse Avalanche Energy (Note 3) 96 mJ TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 125 RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6690A FDS6690A 13’’ 12mm 2500 units tm February 2007 |
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