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FDS6690A Datasheet(数据表) 1 Page - Fairchild Semiconductor

部件型号  FDS6690A
说明  Single N-Channel, Logic Level, PowerTrenchTM MOSFET
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制造商  FAIRCHILD [Fairchild Semiconductor]
网页  http://www.fairchildsemi.com
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FDS6690A Datasheet(HTML) 1 Page - Fairchild Semiconductor

   
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©2007 Fairchild Semiconductor Corporation
FDS6690A Rev E1 (W)
FDS6690A
Single N-Channel, Logic-Level, PowerTrench®®®® MOSFET
General Description
This N-Channel Logic Level MOSFET is produced
using
Fairchild
Semiconductor’s
advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
• 11 A, 30 V.
RDS(ON) = 12.5 mΩ @ VGS = 10 V
RDS(ON) = 17.0 mΩ @ VGS = 4.5 V
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
S
D
S
S
SO-8
D
D
D
G
D
D
D
D
S
S
S
G
Pin 1
SO-8
4
3
2
1
5
6
7
8
Absolute Maximum Ratings T
A=25
oC unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
30
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current – Continuous
(Note 1a)
11
A
– Pulsed
50
Power Dissipation for Single Operation
(Note 1a)
2.5
PD
(Note 1b)
1.0
W
EAS
Single Pulse Avalanche Energy
(Note 3)
96
mJ
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
125
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
25
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6690A
FDS6690A
13’’
12mm
2500 units
tm
February 2007




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