数据搜索系统,热门电子元器件搜索 |
|
LCMXO2-256ZE-3SG32C 数据表(PDF) 41 Page - Lattice Semiconductor |
|
LCMXO2-256ZE-3SG32C 数据表(HTML) 41 Page - Lattice Semiconductor |
41 / 106 page 3-2 DC and Switching Characteristics MachXO2 Family Data Sheet Power-On-Reset Voltage Levels 1, 2, 3, 4 Programming/Erase Specifications Hot Socketing Specifications 1, 2, 3 ESD Performance Please refer to the MachXO2 Product Family Qualification Summary for complete qualification data, including ESD performance. Symbol Parameter Min. Typ. Max. Units VPORUP Power-On-Reset ramp up trip point (band gap based circuit monitoring VCCINT and VCCIO) 0.9 — 1.06 V VPORUPEXT Power-On-Reset ramp up trip point (band gap based circuit monitoring external VCC power supply) 1.5 — 2.1 V VPORDNBG Power-On-Reset ramp down trip point (band gap based circuit monitoring VCCINT) — — 0.93 V VPORDNSRAM Power-On-Reset ramp down trip point (SRAM based circuit monitoring VCCINT) —0.6 — V 1. These POR trip points are only provided for guidance. Device operation is only characterized for power supply voltages specified under rec- ommended operating conditions. 2. For devices without voltage regulators VCCINT is the same as the VCC supply voltage. For devices with voltage regulators, VCCINT is regu- lated from the VCC supply voltage. 3. Note that VPORUP (min.) and VPORDNBG (max.) are in different process corners. For any given process corner VPORDNBG (max.) is always 12.0mV below VPORUP (min.). 4. VPORUPEXT is for HC devices only. In these devices a separate POR circuit monitors the external VCC power supply. Symbol Parameter Min. Max. 1 Units NPROGCYC Flash Programming cycles per tRETENTION — 10,000 Cycles Flash functional programming cycles — 100,000 tRETENTION Data retention at 100°C junction temperature 10 — Years Data retention at 85°C junction temperature 20 — 1. Maximum Flash memory reads are limited to 7.5E13 cycles over the lifetime of the product. Symbol Parameter Condition Max. Units IDK Input or I/O leakage Current 0 < VIN < VIH (MAX) +/-1000 µA 1. Insensitive to sequence of VCC and VCCIO. However, assumes monotonic rise/fall rates for VCC and VCCIO. 2. 0 < VCC < VCC (MAX), 0 < VCCIO < VCCIO (MAX). 3. IDK is additive to IPU, IPD or IBH. |
类似零件编号 - LCMXO2-256ZE-3SG32C |
|
类似说明 - LCMXO2-256ZE-3SG32C |
|
|
链接网址 |
隐私政策 |
ALLDATASHEETCN.COM |
ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |