FDS4672A Rev C(W)

Electrical Characteristics

T

A

= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

Drain–Source Breakdown Voltage

µA

40

V

∆T

J

Breakdown Voltage Temperature

Coefficient

µA, Referenced to 25°C

37

mV/

°C

Zero Gate Voltage Drain Current

1

µA

Gate–Body Leakage, Forward

100

nA

Gate–Body Leakage, Reverse

–100

nA

On Characteristics

(Note 2)

Gate Threshold Voltage

µA

0.8

1.2

2.0

V

∆T

J

Gate Threshold Voltage

Temperature Coefficient

µA, Referenced to 25°C

–4

mV/

°C

Static Drain–Source

On–Resistance

°C

10

15

13

21

m

Ω

On–State Drain Current

50

A

Forward Transconductance

65

S

Dynamic Characteristics

Input Capacitance

4766

pF

Output Capacitance

346

pF

Reverse Transfer Capacitance

f = 1.0 MHz

155

pF

Turn–On Delay Time

17

31

ns

Turn–On Rise Time

9

18

ns

Turn–Off Delay Time

43

68

ns

Turn–Off Fall Time

Ω

14

25

ns

Total Gate Charge

35

49

nC

Gate–Source Charge

7.8

nC

Gate–Drain Charge

8.8

nC

Drain–Source Diode Characteristics and Maximum Ratings

Maximum Continuous Drain–Source Diode Forward Current

2.1

A

Drain–Source Diode Forward

Voltage

(Note 2)

0.7

1.2

V

Notes:

a) 50°/W when

mounted on a 1in

2

pad of 2 oz copper

b) 105°/W when

mounted on a .04 in

2

pad of 2 oz copper

c) 125°/W when mounted on a

minimum pad.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300

µs, Duty Cycle < 2.0%