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STD4N52K3 数据表(PDF) 4 Page - STMicroelectronics |
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STD4N52K3 数据表(HTML) 4 Page - STMicroelectronics |
4 / 21 page Electrical characteristics STD4N52K3, STF4N52K3, STP4N52K3, STU4N52K3 4/21 Doc ID 18206 Rev 2 2 Electrical characteristics (T C = 25 °C unless otherwise specified) Table 4. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)DSS Drain-source breakdown voltage I D = 1 mA, V GS = 0 525 V I DSS Zero gate voltage drain current (V GS = 0) V DS = 525 V V DS = 525 V, T C =125 °C 1 50 μA μA I GSS Gate-body leakage current (V DS = 0) V GS = ± 20 V ± 10 μA V GS(th) Gate threshold voltage V DS = V GS , I D = 50 μA 3 3.75 4.5 V R DS(on Static drain-source on- resistance V GS = 10 V, I D = 1.25 A 2.1 2.6 Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit C iss C oss C rss Input capacitance Output capacitance Reverse transfer capacitance V DS = 100 V, f = 1 MHz, V GS = 0 - 334 28 5 - pF pF pF C oss(eq) (1) 1. C oss eq . is defined as a constant equivalent capacitance giving the same charging time as C oss when V DS increases from 0 to 80% V DSS . Equivalent output capacitance time related V DS = 0 to 420 V, V GS = 0 - 20 - pF R G Intrinsic gate resistance f = 1 MHz open drain - 4 - Ω Q g Q gs Q gd Total gate charge Gate-source charge Gate-drain charge V DD = 400 V, I D = 2.5 A, V GS = 10 V (see Figure 19) - 11 2 7 - nC nC nC Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max Unit t d(on) t r t d(off) t f Turn-on delay time Rise time Turn-off-delay time Fall time V DD = 260 V, I D = 1.25 A, R G = 4.7 Ω, V GS = 10 V (see Figure 18) - 8 7 21 14 - ns ns ns ns |
类似零件编号 - STD4N52K3 |
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类似说明 - STD4N52K3 |
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