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STD4N52K3 数据表(PDF) 4 Page - STMicroelectronics

部件名 STD4N52K3
功能描述  N-channel 525 V, 2.5 A, 2.1typ., SuperMESH3??Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STD4N52K3 数据表(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STD4N52K3, STF4N52K3, STP4N52K3, STU4N52K3
4/21
Doc ID 18206 Rev 2
2
Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Table 4.
On /off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
breakdown voltage
I
D
= 1 mA, V
GS
= 0
525
V
I
DSS
Zero gate voltage
drain current (V
GS
= 0)
V
DS
= 525 V
V
DS
= 525 V, T
C
=125 °C
1
50
μA
μA
I
GSS
Gate-body leakage
current (V
DS
= 0)
V
GS
= ± 20 V
± 10
μA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 50 μA
3
3.75
4.5
V
R
DS(on
Static drain-source on-
resistance
V
GS
= 10 V, I
D
= 1.25 A
2.1
2.6
Ω
Table 5.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
= 100 V, f = 1 MHz,
V
GS
= 0
-
334
28
5
-
pF
pF
pF
C
oss(eq)
(1)
1.
C
oss eq
. is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
.
Equivalent output
capacitance time
related
V
DS
= 0 to 420 V, V
GS
= 0
-
20
-
pF
R
G
Intrinsic gate
resistance
f = 1 MHz open drain
-
4
-
Ω
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 400 V, I
D
= 2.5 A,
V
GS
= 10 V
(see
Figure 19)
-
11
2
7
-
nC
nC
nC
Table 6.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
V
DD
= 260 V, I
D
= 1.25 A,
R
G
= 4.7
Ω, V
GS
= 10 V
(see
Figure 18)
-
8
7
21
14
-
ns
ns
ns
ns


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