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FDN360 数据表(PDF) 4 Page - Fairchild Semiconductor |
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FDN360 数据表(HTML) 4 Page - Fairchild Semiconductor |
4 / 8 page FDN360P Rev. D Typical Characteristics (continued) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient themal response will change depending on the circuit board design. 0 10 20 30 40 50 0.0001 0.001 0.01 0.1 1 10 100 1000 SINGLE PULSE TIME (SEC) SINGLE PULSE RθJA=270 o C/W TA=25 o C 0 2 4 6 8 10 024 68 10 Qg, GATE CHARGE (nC) ID= -2.0A VDS= -5.0V -10V -15V 0 120 240 360 480 600 0 6 12 18 24 30 -VDS, DRAIN TO SOURCE VOLTAGE (V) Ciss Coss Crss f=1MHz VGS= 0V 0.0001 0.001 0.01 0.1 1 10 100 300 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 t , TIME (sec) R (t) = r(t) * R R = 270 °C/W Duty Cycle, D = t /t 1 2 θJA θJA θJA T - T = P * R (t) θJA A J P(pk) t1 t 2 1 Single Pulse D = 0.5 0.1 0.05 0.02 0.01 0.2 0.01 0.1 1 10 100 0.1 1 10 100 -VDS, DRAIN-SOURCE VOLTAGE (V) RDS(ON) Limit DC 10s 1s 100ms 10ms 1ms 100 µs VGS= -10V SINGLE PULSE RθJC=270 o C/W TA=25 o C |
类似零件编号 - FDN360 |
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类似说明 - FDN360 |
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