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FDG6308 数据表(PDF) 2 Page - Fairchild Semiconductor |
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FDG6308 数据表(HTML) 2 Page - Fairchild Semiconductor |
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2 / 5 page  FDG6308P Rev B (W) Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA –20 V ∆BVDSS ===∆TJ Breakdown Voltage Temperature Coefficient ID = –250 µA, Referenced to 25°C –15 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1 µA IGSSF Gate–Body Leakage, Forward VGS = –8 V, VDS = 0 V –100 nA IGSSR Gate–Body Leakage, Reverse VGS = 8 V, VDS = 0 V 100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS,ID = –250 µA –0.4 –0.9 –1.5 V ∆VGS(th) ===∆TJ Gate Threshold Voltage Temperature Coefficient ID = –250 µA, Referenced to 25°C 2 mV/ °C RDS(on) Static Drain–Source On–Resistance VGS = –4.5 V, ID = –0.6 A VGS = –2.5 V, ID = –0.5 A VGS = –1.8 V, ID = –0.4 A VGS = –4.5 V, ID = –0.6 A, TJ=125°C 0.27 0.36 0.55 0.35 0.40 0.55 0.80 0.56 Ω ID(on) On–State Drain Current VGS = –4.5 V, VDS = –5 V –2 A gFS Forward Transconductance VDS = –5 V, ID = –0.6 A 2.1 S Dynamic Characteristics Ciss Input Capacitance 153 pF Coss Output Capacitance 25 pF Crss Reverse Transfer Capacitance VDS = –10 V, V GS = 0 V, f = 1.0 MHz 9pF Switching Characteristics (Note 2) td(on) Turn–On Delay Time 5 10 ns tr Turn–On Rise Time 15 27 ns td(off) Turn–Off Delay Time 7 14 ns tf Turn–Off Fall Time VDD = –10 V, ID = 1 A, VGS = –4.5 V, RGEN = 6 Ω 1.6 3.2 ns Qg Total Gate Charge 1.8 2.5 nC Qgs Gate–Source Charge 0.3 nC Qgd Gate–Drain Charge VDS = –10 V, ID = –0.6 A, VGS = –4.5 V 0.4 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current –0.25 A VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = –0.25 A(Note 2) –0.77 –1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user's board design. RθJA = 415°C/W when mounted on a minimum pad . 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% |
类似零件编号 - FDG6308 |
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类似说明 - FDG6308 |
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