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SI2305CDS-T1-GE3 数据表(PDF) 1 Page - Vishay Siliconix |
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SI2305CDS-T1-GE3 数据表(HTML) 1 Page - Vishay Siliconix |
1 / 10 page Vishay Siliconix Si2305CDS Document Number: 64847 S10-0720-Rev. C, 29-Mar-10 www.vishay.com 1 P-Channel 8 V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch for Portable Devices • DC/DC Converter PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) d Qg (Typ.) - 8 0.035 at VGS = - 4.5 V - 5.8 12 nC 0.048 at VGS = - 2.5 V - 5.0 0.065 at VGS = - 1.8 V - 4.3 Ordering Information: Si2305CDS-T1-GE3 (Lead (Pb)-free and Halogen-free) G TO-236 (SOT-23) S D Top View 2 3 1 * Marking Code Si2305CDS (N5)* S G D P-Channel MOSFET Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 5 s. c. Maximum under steady state conditions is 175 °C/W. d. TC = 25 °C. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS - 8 V Gate-Source Voltage VGS ± 8 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID - 5.8 A TC = 70 °C - 4.7 TA = 25 °C - 4.4a, b TA = 70 °C - 3.5a, b Pulsed Drain Current (10 µs Pulse Width) IDM - 20 Continuous Source-Drain Diode Current TC = 25 °C IS - 1.4 TA = 25 °C - 0.8a, b Maximum Power Dissipation TC = 25 °C PD 1.7 W TC = 70 °C 1.1 TA = 25 °C 0.96a, b TA = 70 °C 0.62a, b Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta, c t ≤ 5 s RthJA 100 130 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 60 75 |
类似零件编号 - SI2305CDS-T1-GE3 |
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类似说明 - SI2305CDS-T1-GE3 |
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