FDD6035 datasheet(2/6 Pages) FAIRCHILD

部件名	FDD6035

功能描述	N-Channel, Logic Level, PowerTrench MOSFET

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制造商	FAIRCHILD [Fairchild Semiconductor]

网页	http://www.fairchildsemi.com

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2 / 6 page

FDD6035AL Rev. D(W)

Electrical Characteristics

T

A

= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Drain-Source Avalanche Ratings (Note 2)

EAS

Drain-Source Avalanche Energy

Single Pulse, VDD = 15 V, ID= 12A

180

mJ

IAS

Drain-Source Avalanche Current

12

A

Off Characteristics

BVDSS

Drain–Source Breakdown Voltage

VGS = 0 V,

ID = 250

µA

30

V

∆BVDSS

∆T

J

Breakdown Voltage Temperature

Coefficient

ID = 250

µA,Referenced to 25°C

24

mV/

°C

IDSS

Zero Gate Voltage Drain Current

VDS = 24 V,

VGS = 0 V

1

µA

IGSS

Gate–Body Leakage

VGS =

±20 V, V

DS = 0 V

±100

nA

On Characteristics

(Note 2)

VGS(th)

Gate Threshold Voltage

VDS = VGS,

ID = 250

µA

1

1.9

3

V

∆VGS(th)

∆T

J

Gate Threshold Voltage

Temperature Coefficient

ID = 250

µA,Referenced to 25°C

–5

mV/

°C

RDS(on)

Static Drain–Source

On–Resistance

VGS = 10 V,

ID = 12 A

VGS = 4.5 V,

ID = 10 A

VGS = 10 V, ID = 12 A,TJ=125

°C

7.7

9.9

11.4

12

14

19

m

Ω

ID(on)

On–State Drain Current

VGS = 10 V,

VDS = 5 V

50

A

gFS

Forward Transconductance

VDS = 10 V,

ID = 12 A

47

S

Dynamic Characteristics

Ciss

Input Capacitance

1230

pF

Coss

Output Capacitance

325

pF

Crss

Reverse Transfer Capacitance

VDS = 15 V,

V GS = 0 V,

f = 1.0 MHz

150

pF

RG

Gate Resistance

VGS = 15 mV,

f = 1.0 MHz

1.5

pF

Switching Characteristics (Note 2)

td(on)

Turn–On Delay Time

10

19

ns

tr

Turn–On Rise Time

7

13

ns

td(off)

Turn–Off Delay Time

29

46

ns

tf

Turn–Off Fall Time

VDD = 15 V,

ID = 1 A,

VGS = 10 V,

RGEN = 6

Ω

12

21

ns

Qg

Total Gate Charge

13

18

nC

Qgs

Gate–Source Charge

3.5

nC

Qgd

Gate–Drain Charge

VDS = 15V,

ID = 12 A,

VGS = 5 V

5.1

nC

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