数据搜索系统,热门电子元器件搜索 |
|
FDD6030BL 数据表(PDF) 2 Page - Fairchild Semiconductor |
|
FDD6030BL 数据表(HTML) 2 Page - Fairchild Semiconductor |
2 / 5 page FDD6030BL Rev. A Electrical Characteristics TC=25 oC unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA30 V IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 µA IGSSF Gate-Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate-Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA ON CHARACTERISTICS (Note 2) VGS(TH) Gate Threshold Voltage VDS = VGS, ID = 250 µA1 3 V RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 9 A VGS = 4.5 V, ID = 7.5 A 0.018 0.025 Ω DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current 2.3 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.3 A 1.3 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the drain tab. RθJC is guaranteed by design while RθJA is determined by the user's board design. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% a) RθJA= 45 oC/W when mounted on a 1in2 pad of 2oz copper. b) RθJA=96 oC/W when mounted on a minimum pad. |
类似零件编号 - FDD6030BL |
|
类似说明 - FDD6030BL |
|
|
链接网址 |
隐私政策 |
ALLDATASHEETCN.COM |
ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |