February 2000

PRELIMINARY

2000 Fairchild Semiconductor Corporation

FDD3570 Rev BW)

FDD3570

General Description

This

N-Channel

Logic

level

MOSFET

has

been

designed specifically to improve the overall efficiency of

DC/DC

converters

using

either

synchronous

or

conventional switching PWM controllers.

This MOSFET features faster switching and lower gate

specifications resulting in DC/DC power supply designs

with higher overall efficiency.

Features

• 10 A, 80 V.

Ω @ V

Ω @ V

• Fast switching speed.

• High performance trench technology for extremely

• High power and current handling capability.

G

S

D

TO-252

S

D

G

Absolute Maximum Ratings

Symbol

Parameter

Ratings

Units

Drain-Source Voltage

80

V

Gate-Source Voltage

± 20

V

Maximum Drain Current-Continuous

(Note 1)

43

(Note 1a)

10

Maximum Drain Current – Pulsed

110

A

(Note 1)

69

(Note 1a)

3.4

(Note 1b)

1.3

W

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to- Case

(Note 1)

1.8

°C/W

Thermal Resistance, Junction-to- Ambient

(Note 1a)

37

°C/W

(Note 1b)

96

°C/W

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDD3570

FDD3570

13’’

16mm

2500