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FDS86242 数据表(PDF) 2 Page - Fairchild Semiconductor |
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FDS86242 数据表(HTML) 2 Page - Fairchild Semiconductor |
2 / 6 page www.fairchildsemi.com 2 ©2010 Fairchild Semiconductor Corporation FDS86242 Rev. C Electrical Characteristics T J = 25°C unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics Drain-Source Diode Characteristics Symbol Parameter Test Conditions Min Typ Max Units BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 150 V ΔBV DSS ΔT J Breakdown Voltage Temperatur Coefficient ID = 250 μA, referenced to 25 °C 104 mV/°C IDSS Zero Gate Voltage Drain Current VDS = 120 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA2 3.5 4 V ΔV GS(th) ΔT J Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C -10 mV/°C rDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 4.1 A 56.3 67 m Ω VGS = 6 V, ID = 3.3 A 73.8 98 VGS = 10 V, ID = 4.1 A, TJ = 125 °C 107 126 gFS Forward Transconductance VDS = 10 V, ID = 4.1 A 11 S Ciss Input Capacitance VDS = 75 V, VGS = 0 V, f = 1MHz 570 760 pF Coss Output Capacitance 64 85 pF Crss Reverse Transfer Capacitance 2.9 5 pF Rg Gate Resistance 0.5 Ω td(on) Turn-On Delay Time VDD = 75 V, ID = 4.1 A, VGS = 10 V, RGEN = 6 Ω 7.9 16 ns tr Rise Time 1.5 10 ns td(off) Turn-Off Delay Time 13 23 ns tf Fall Time 2.8 10 ns Qg(TOT) Total Gate Charge VGS = 0 V to 10 V VDD = 75 V, ID = 4.1 A 8.9 13 nC Qg(TOT) Total Gate Charge VGS = 0 V to 5 V 4.9 7 nC Qgs Gate to Source Charge 3.0 nC Qgd Gate to Drain “Miller” Charge 2.0 nC VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = 4.1 A (Note 2) 0.81 1.3 V VGS = 0 V, IS = 2 A (Note 2) 0.77 1.2 trr Reverse Recovery Time IF = 4.1 A, di/dt = 100 A/μs 61 98 ns Qrr Reverse Recovery Charge 71 114 nC NOTES: 1. RθJA is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. Starting TJ = 25 °C, L = 1 mH, IAS = 9 A, VDD = 135 V, VGS = 10 V. a) 50 °C/W when mounted on a 1 in2 pad of 2 oz copper. b) 125 °C/W when mounted on a minimum pad. |
类似零件编号 - FDS86242 |
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类似说明 - FDS86242 |
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